Characterization of diamond radiation detector with B-doped/undoped stacked structure

被引：2

作者：

Masuzawa, Tomoaki ^{[1
]}

Miyake, Taku ^{[2
]}

Nakagawa, Hisaya ^{[1
]}

Nakano, Takayuki ^{[1
]}

Takagi, Katsuyuki ^{[1
,2
]}

Aoki, Toru ^{[1
,2
]}

Mimura, Hidenori ^{[1
,2
]}

Yamada, Takatoshi ^{[3
]}

机构：

[1] Shizuoka Univ, Res Inst Elect, 3-5-1 Johoku,Naka Ku, Hamamatsu 4328011, Japan

[2] ANSeeN Inc, 3-5-1 Johoku,Naka Ku, Hamamatsu 4328011, Japan

[3] Natl Inst Adv Ind Sci & Technol, Nano Carbon Device Res Ctr, 1-1-1 Higashi, Tsukuba 3058565, Japan

来源：

关键词：

Polycrystalline diamond; Radiation detector; Boron-doped; Neutron converter; CVD DIAMOND; VAPOR-DEPOSITION; HARDNESS; SINGLE; MECHANISM;

D O I：

10.1016/j.diamond.2023.109985

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, a radiation detector made of polycrystalline diamond was characterized by neutron , alpha particle. The detector consisted of a boron (B)-doped/undoped stacked structure, where the alpha particles were irradiated from the B-doped layer side. Radiation signals obtained by the multichannel analyzer were compared , bias dependence was investigated. Results indicate that the formation of the B-doped layer modifies band structure at B-doped/undoped interface, which improving signal hole collection.

引用

页数：5

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