β-Ga2O3 bulk single crystals grown by a casting method

被引：25

作者：

Xia, Ning ^{[1
,2
,3
]}

Liu, Yingying ^{[1
,2
,3
]}

Wu, Dan ^{[3
]}

Li, Lei ^{[1
,2
]}

Ma, Keke ^{[3
]}

Wang, Jiabin ^{[3
]}

Zhang, Hui ^{[1
,2
,3
]}

Yang, Deren ^{[1
,2
,3
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

[3] ZJU Hangzhou Global Sci & Technol Innovat Ctr, Zhejiang Prov Key Lab Power Semicond Mat & Devices, Hangzhou 311200, Zhejiang, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 935卷

基金：

中国国家自然科学基金; 美国国家科学基金会;

关键词：

beta-Ga2O3; Casting method; Etching; Defect; Simulation; Crystal growth; GALLIUM-OXIDE;

D O I：

10.1016/j.jallcom.2022.168036

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A novel casting method was developed to grow beta-Ga2O3 bulk single crystals without using a seed crystal. After separation from the crucible and processing, 2-inch diameter single crystal beta-Ga2O3 ingots with (100) plane could be obtained and no large imperfection were observed. The 10 x 10 mm(2) beta-Ga2O3 single crystals samples with different crystal orientation have good crystal quality with full width at half maximum less than 50 '', surface roughness less than 0.5 nm and defect density at the magnitude of 10(4) cm(-2). On the basis of the experimental phenomena, a numerical simulation model was proposed to explain the crystal growth process in the casting method. (c) 2022 Elsevier B.V. All rights reserved.

引用

页数：6

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