Geant4 simulation of energy deposition ratio and physical processes of CdZnTe crystals irradiated by high energy particles

CdZnTe (CZT) is an II-VI compound semiconductor with a zinc blende structure and has a wide range of applications in nuclear radiation detectors. As the device size becomes nanoscale, the displacement damage caused by high-energy proton irradiation in space environment has become one of the main factors affecting the electrical properties of components. In this paper, Monte Carlo software Geant4 is used to simulate the types and proportions of physical processes generated by different particles incident on CZT crystals, the proportion and depth distribution of NIEL of particles with different energy/angle. The results show that the type, energy and angle of incident particles will affect the proportion of energy deposition and the distribution of energy deposition with depth during irradiation. The physical effects are different under different irradiation conditions. The simulation results have reference value for studying the displacement damage law of CZT irradiated by particles under different conditions and the stability of CZT detector in radiation environment.