Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system

被引：3
|
作者：
Saito, Yoshiaki [1 ]
Ikeda, Shoji [1 ,2 ,3 ,4 ]
Endoh, Tetsuo [1 ,2 ,3 ,4 ,5 ]
机构：
[1] Tohoku Univ, Ctr Innovat Integrated Elect Syst, Sendai 9800845, Japan
[2] Tohoku Univ, Ctr Spintron Res Network, Sendai 9808577, Japan
[3] Tohoku Univ, Ctr Sci & Innovat Spintron, Sendai 9808577, Japan
[4] Tohoku Univ, Res Inst Elect Commun, Sendai 9808577, Japan
[5] Tohoku Univ, Grad Sch Engn, Dept Elect Engn, Sendai 9808579, Japan
来源：
APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 01期
基金：
日本学术振兴会;
关键词：
spintronics; spin hall effect; synthetic antiferromanet; interlayer exchange coupling; spin hall angle; MAGNETIZATION;
D O I：
10.35848/1882-0786/acb311
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The correlation between the magnitude of interlayer exchange coupling (J (ex)) and charge-to-spin conversion efficiency (spin Hall angle: theta (SH)) is investigated in a synthetic antiferromagnetic (AF) system with compensated magnetization. The magnitude of theta (SH) increases linearly with increasing the magnitude of J (ex). We observe the factor of 6.5 increase of spin Hall angle (theta (SH) = 45.8%) in a low resistive (rho (xx) = 41 mu omega cm) synthetic AF system by increasing the magnitude of J (ex). The low resistive synthetic AF system will be a promising building block for future nonvolatile high-speed memories and logic circuits using the spin Hall effect.
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收藏
页数：6
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