Full-Area i-a-Si:H/ATO/Mg Electron-Selective Contacts for Silicon Solar Cells

TiOX has attracted tremendous research interest as an electron-selective contact (ESCs) in crystalline silicon (c-Si) solar cells due to its reasonable passivating quality and suitable energy band. Al-doped TiOX (ATO) processes more oxygen vacancies, consequently promoting its contact performance. Besides, the work function (WF) can be further optimized after inserting a thin Mg layer, resulting in outstanding contact resistivity (p(c)). In this contribution, we proposed hydrogenated intrinsic amorphous silicon (i-a-Si:H)/ATO/Mg for n-type c-Si solar cells as ESC with excellent Pc of 6 m Omega cm(2) and minority carrier lifetime (tau) of 1.5 ms, and yielded an efficiency of 18.2%. Afterward, a complete loss analysis of the champion cell was carried out using Quokka 2 simulation software to define the dominant loss mechanisms. This paradigm introduces a promising approach for replacing widely used heterocontacts in efficient cSi solar cells.