Electronic Structure Manipulation of the Mott Insulator RuCl3 via Single-Crystal to Single-Crystal Topotactic Transformation

被引:7
|
作者
Lu, Weiqun [1 ]
Lee, Hyungseok [1 ,2 ]
Cha, Joonil [1 ,2 ]
Zhang, Jian [1 ,3 ]
Chung, In [1 ,2 ]
机构
[1] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 08826, South Korea
[2] Inst for Basic Sci Korea, Ctr Correlated Electron Syst, Seoul 08826, South Korea
[3] Chinese Acad Sci, Inst Solid State Phys, Key Lab Photovolta & Energy Conservat Mat, HFIPS, Hefei 230031, Peoples R China
基金
新加坡国家研究基金会;
关键词
Charge Carrier Transport; Electronic Structures; Intercalation; Mott Insulators; RuCl3; TRANSITION-METAL; INTERCALATION;
D O I
10.1002/anie.202219344
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The core task for Mott insulators includes how rigid distributions of electrons evolve and how these induce exotic physical phenomena. However, it is highly challenging to chemically dope Mott insulators to tune properties. Herein, we report how to tailor electronic structures of the honeycomb Mott insulator RuCl3 employing a facile and reversible single-crystal to single-crystal intercalation process. The resulting product (NH4)(0.5)RuCl3 center dot 1.5 H2O forms a new hybrid superlattice of alternating RuCl3 monolayers with NH4+ and H2O molecules. Its manipulated electronic structure markedly shrinks the Mott-Hubbard gap from 1.2 to 0.7 eV. Its electrical conductivity increases by more than 10(3) folds. This arises from concurrently enhanced carrier concentration and mobility in contrary to the general physics rule of their inverse proportionality. We show topotactic and topochemical intercalation chemistry to control Mott insulators, escalating the prospect of discovering exotic physical phenomena.
引用
收藏
页数:7
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