Effects of TiO2 thin films on silicon nanowire arrays in heterojunction solar cells

In recent years, the energy crisis has gained increasing attention, with greater emphasis being placed on renewable energy. Currently, solar power is regarded as the most developed form of renewable energy. Many materials have been used in solar cells. Radiofrequency (RF) magnetron sputtering is an effective technique used to produce large-area, easy-to-process thin films. In this study, we fabricated p-layer silicon nanowire (SiNW) arrays by using electroless etching to replace previous multilayer films. TiO2-SiNW array heterojunctions were fabricated by preparing TiO2 as an N layer through magnetron sputtering. Subsequently, the Grey-Taguchi method was used to analyze and optimize p-n heterojunctions with TiO2 films. After the effects of the sputtering parameters (RF power, process pressure, deposition temperature, and deposition time) on surface morphology, material structure, photoelectric conversion efficiency, and reflectivity were investigated, an aluminum-doped zinc oxide (AZO) window layer was added and annealed. Grey correlation analysis revealed a decrease in reflectivity from 8.02225 % to 7.72081 % and an increase in photoelectric conversion efficiency from 0.01915 % to 0.082 %. During the confirmation runs, the TiO2 film was found to be amorphous and wrapped around an array of SiNWs. After the AZO window layer was added, reflectivity increased to 18.04712 %, and the efficiency of photoelectric conversion increased to 0.124 %. In addition, according to the results of the confirmation runs, the AZO film was polymorphic. These experimental results confirm the effectiveness of RF magnetron sputtering, which provides high reflectivity and photoelectric conversion efficiency.