Broadband Asymmetric GaAs MMIC Doherty Power Amplifiers With Simplified Peaking Matching Network and Output Capacitance Compensation

被引：3

作者：

Chen, Weijuan ^{[1
]}

Wu, Yongle ^{[1
]}

Zheng, Yana ^{[2
]}

Wang, Weimin ^{[2
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 08期

关键词：

Asymmetric; broadband; Doherty power amplifier (DPA); load modulation; monolithic microwave integrated; circuit (MMIC); output capacitance ( C-OUT); METHODOLOGY; DESIGN; BANDWIDTH; PA;

D O I：

10.1109/LMWT.2023.3279573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter proposes a compact asymmetric Doherty power amplifier (DPA) structure with a simplified peaking matching network (MN), and the output capacitance (COUT) of the peaking transistor is considered under different power states. The load-pull, including the MNs of carrier and peaking branch, is taken place to demonstrate the suggested scheme. For verification, a monolithic microwave integrated circuit (MMIC) DPA was designed and manufactured using a 0.25-mu m GaAs process. The measurement results show that over a wideband of 4.3-6.0 GHz, the saturated output power is 29.4-30.4 dBm with a drain efficiency (DE) of 46.4%-57.1%. At 9-dB power back-off (PBO), the DE is 31%-43%.

引用

页码：1195 / 1198

页数：4

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