Stabilizing high-humidity perovskite solar cells with MoS2 hybrid HTL
被引:8
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作者:
Fahsyar, Puteri Nor Aznie
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机构:
Taylors Univ, Clean Technol Impact Lab, Subang Jaya, Selangor, Malaysia
Univ Kebangsaan Malaysia, Solar Energy Res Inst, Bangi, Selangor, MalaysiaTaylors Univ, Clean Technol Impact Lab, Subang Jaya, Selangor, Malaysia
Fahsyar, Puteri Nor Aznie
[1
,2
]
Ludin, Norasikin Ahmad
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机构:
Univ Kebangsaan Malaysia, Solar Energy Res Inst, Bangi, Selangor, MalaysiaTaylors Univ, Clean Technol Impact Lab, Subang Jaya, Selangor, Malaysia
Ludin, Norasikin Ahmad
[2
]
Ramli, Noor Fadhilah
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机构:
Univ Kebangsaan Malaysia, Solar Energy Res Inst, Bangi, Selangor, MalaysiaTaylors Univ, Clean Technol Impact Lab, Subang Jaya, Selangor, Malaysia
Ramli, Noor Fadhilah
[2
]
Zulaikha, Puteri Intan
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机构:
Univ Kebangsaan Malaysia, Solar Energy Res Inst, Bangi, Selangor, MalaysiaTaylors Univ, Clean Technol Impact Lab, Subang Jaya, Selangor, Malaysia
Zulaikha, Puteri Intan
[2
]
Sepeai, Suhaila
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机构:
Univ Kebangsaan Malaysia, Solar Energy Res Inst, Bangi, Selangor, MalaysiaTaylors Univ, Clean Technol Impact Lab, Subang Jaya, Selangor, Malaysia
Sepeai, Suhaila
[2
]
Yasir, Ahmad Shah Hizam Md
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机构:
Rabdan Acad, Fac Resilience, Abu Dhabi, U Arab EmiratesTaylors Univ, Clean Technol Impact Lab, Subang Jaya, Selangor, Malaysia
TRANSITION-METAL DICHALCOGENIDES;
SPIRO-OMETAD;
TRANSPORT LAYER;
PERFORMANCE;
EFFICIENT;
EXFOLIATION;
TEMPERATURE;
D O I:
10.1038/s41598-023-39189-0
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
The obstacle to the industrialization of perovskite solar cells (PSC) technology lies in their stability. This work rationalizes the PSC design with the employment of 2D-MoS2 as the hybrid hole transport layer (HTL). MoS2 was selected due to its unique optoelectronic and mechanical properties that could enhance hole extraction and thus boost the performance and stability of PSC devices. Five concentrations indicated MoS2 nanosheets were directly deposited onto the perovskite layer via the facile spin coating method. The electrochemical exfoliation and liquid exchange methods were demonstrated to obtain the lateral size of MoS2 nanosheets and further discussed their microscopic and spectroscopic characterizations. Remarkably, the optimum thickness and the excellent device increased the stability of the PSC, allowing it to maintain 45% of its degradation percentage ((?PCE)/(PCE )) for 120 h with high relative humidity (RH = 40-50%) in its vicinity. We observed that lithium-ion can intercalate into the layered MoS2 structure and reduce the interfacial resistance of perovskite and the HTL. Most importantly, the 2D-MoS2 mechanism's effect on enabling stable and efficient devices by reducing lithium-ion migration in the HTL is demonstrated in this work to validate the great potential of this hybrid structure in PSC applications.
机构:
Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
Capasso, Andrea
Matteocci, Fabio
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机构:
Univ Roma Tor Vergata, CHOSE, Dept Elect Engn, I-00173 Rome, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
Matteocci, Fabio
Najafi, Leyla
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机构:
Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
Univ Genoa, Dipartimento Chim & Chim Ind, Via Dodecaneso 31, I-16146 Genoa, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
Najafi, Leyla
Prato, Mirko
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机构:
Ist Italiano Tecnol, Nanochem Dept, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
Prato, Mirko
Buha, Joka
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机构:
Ist Italiano Tecnol, Nanochem Dept, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
Buha, Joka
Cina, Lucio
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h-index: 0
机构:
Univ Roma Tor Vergata, CHOSE, Dept Elect Engn, I-00173 Rome, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
Cina, Lucio
Pellegrini, Vittorio
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机构:
Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
Pellegrini, Vittorio
Di Carlo, Aldo
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机构:
Univ Roma Tor Vergata, CHOSE, Dept Elect Engn, I-00173 Rome, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
Di Carlo, Aldo
Bonaccorso, Francesco
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机构:
Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
机构:
Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Foshan Xianhu Lab, Foshan 528216, Guangdong, Peoples R China
Monash Univ, Dept Mat Sci & Engn, Clayton, Vic 3168, AustraliaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Huang, Wenchao
Bu, Tongle
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机构:
Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Bu, Tongle
Huang, Fuzhi
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h-index: 0
机构:
Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Foshan Xianhu Lab, Foshan 528216, Guangdong, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Huang, Fuzhi
Cheng, Yi-Bing
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机构:
Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Foshan Xianhu Lab, Foshan 528216, Guangdong, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
机构:
Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R China
Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R China
Sun, Bo
Xi, Shuang
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机构:
Nanjing Forestry Univ, Sch Mech & Elect Engn, Nanjing 210037, Jiangsu, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R China
Xi, Shuang
Liu, Zhiyong
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机构:
Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R China
Liu, Zhiyong
Liu, Xinyue
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机构:
Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R China
Liu, Xinyue
Wang, Ziyi
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机构:
Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R China
Wang, Ziyi
Tan, Xianhua
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机构:
Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R China
Tan, Xianhua
Shi, Tielin
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h-index: 0
机构:
Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R China
Shi, Tielin
Zhou, Jianxin
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h-index: 0
机构:
Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R China
Zhou, Jianxin
Liao, Guanglan
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h-index: 0
机构:
Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Hubei, Peoples R China
机构:
School of Physics and Electronics,Shandong Normal University
CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and TechnologySchool of Physics and Electronics,Shandong Normal University
Fengjing Liu
Jiawei Wang
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h-index: 0
机构:
CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and TechnologySchool of Physics and Electronics,Shandong Normal University
Jiawei Wang
Liang Wang
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机构:
CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and TechnologySchool of Physics and Electronics,Shandong Normal University
Liang Wang
Xiaoyong Cai
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h-index: 0
机构:
CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and TechnologySchool of Physics and Electronics,Shandong Normal University
Xiaoyong Cai
Chao Jiang
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h-index: 0
机构:
CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and TechnologySchool of Physics and Electronics,Shandong Normal University
Chao Jiang
Gongtang Wang
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机构:
School of Physics and Electronics,Shandong Normal UniversitySchool of Physics and Electronics,Shandong Normal University