A pressure-induced high-pressure metallic GeTe phase

被引:3
|
作者
Zhao, Lamei [1 ]
Zhang, Xinran [1 ]
Wan, Biao [1 ]
Zhang, Zhuangfei [1 ]
Shen, Weixia [1 ]
Zhang, Yuewen [1 ]
Fang, Chao [1 ]
Chen, Liangchao [1 ]
Wang, Qianqian [1 ]
He, Julong [2 ]
Jia, Xiaopeng [1 ]
机构
[1] Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Zhengzhou 450052, Peoples R China
[2] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China
来源
JOURNAL OF CHEMICAL PHYSICS | 2023年 / 158卷 / 13期
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
TRANSITION;
D O I
10.1063/5.0143506
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
As an important phase-change material, GeTe has many high-pressure phases as well, but its phase transitions under pressure are still lack of clarity. It is challenging to identify high-pressure GeTe crystal structures owing to the phase coexistence in a wide pressure range and the reversibility of phase transitions. Hence, first-principles calculations are required to provide further information in addition to limited experimental characterizations. In this work, a new orthorhombic Cmca GeTe high-pressure phase has been predicted via the CALYPSO method as the most energetically favorable phase in the pressure range between similar to 30 and similar to 38.5 GPa, which would update the GeTe high-pressure phase transition sequence. The crystal structure of the Cmca phase is composed of alternate stacking puckered layers of Ge six-membered rings and Te four-membered rings along the b direction. The high density of states near the Fermi level and delocalization of electrons from the two-dimensional electron localization function indicate a strong metallic property of the Cmca phase. Electron-phonon coupling calculations indicate that the Cmca phase is superconductive below similar to 4.2 K at 35 GPa. The simulated x-ray diffraction pattern of the Cmca phase implies that this phase might coexist with the Pnma-boat phase under high pressure. These results offer further understanding on the high-pressure structural evolution and physical properties in GeTe and other IV-VI semiconductors.
引用
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页数:5
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