Experimental Characterization of Switching Properties of ReRAM Devices by the Capacitance Measurements

被引:0
|
作者
Costa, Fernando J. [1 ,2 ]
Zeinati, Aseel [2 ]
Trevisoli, Renan [3 ,4 ]
Misra, D. [2 ]
Doria, Rodrigo T. [1 ]
机构
[1] Ctr Univ FEI, Elect Engn Dept, Sao Bernardo Do Campo, Brazil
[2] New Jersey Inst Technol NJIT, ECE Dept, Newark, NJ 07102 USA
[3] Insper Inst Ensino & Pesquisa, Sao Paulo, SP, Brazil
[4] Pontificia Univ Catolica Sao Paulo PUC SP, Sao Paulo, SP, Brazil
来源
2023 37TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO | 2023年
关键词
MIM; ReRAM; Resistance; Multi-level Cell; Capacitance;
D O I
10.1109/SBMicro60499.2023.10302503
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper aims to present for the first time an analysis of the switching properties of Resistive Random-Access-Memory devices in relation to the capacitance variation of the Metal-Insulator-Metal structure. A capacitance spread was observed when a set of pulses with varying widths and amplitudes was applied to operate the devices in the Multi- Level-Cell regime. The devices demonstrate an increase in the capacitance from 2.0338 to 2.0344 pF/mu m(2) from the pristine state to the maximum pulse width increment. This allows the devices to exhibit multiple capacitive reactance states, demonstrating the quantization of the conductance, required for the application in in-memory computing systems.
引用
收藏
页数:4
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