Moire Superlattice Structure of Pleated Trilayer Graphene Imaged by 4D Scanning Transmission Electron Microscopy

被引:2
|
作者
Wen, Yi [1 ]
Coupin, Matthew J. [2 ]
Hou, Linlin [1 ]
Warner, Jamie H. [2 ,3 ]
机构
[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
[2] Univ Texas Austin, Texas Mat Inst, Mat Sci & Engn Program, Austin, TX 78712 USA
[3] Univ Texas Austin, Walker Dept Mech Engn, Austin, TX 78712 USA
关键词
graphene; TBG; 4D-STEM; moiresuperlattices; TEM; DIFFERENTIAL PHASE-CONTRAST; THIN FOILS; BANDS;
D O I
10.1021/acsnano.2c12179
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Moire superlattices in graphene arise from rotational twists in stacked 2D layers, leading to specific band structures, charge density and interlayer electron and excitonic interactions. The periodicities in bilayer graphene moire lattices are given by a simple moire basis vector that describes periodic oscillations in atomic density. The addition of a third layer to form trilayer graphene generates a moire lattice comprised of multiple harmonics that do not occur in bilayer systems, leading to nontrivial crystal symmetries. Here, we use atomic resolution 4D-scanning transmission electron microscopy to study atomic structure in bilayer and trilayer graphene moire superlattices and use 4D-STEM to map the electric fields to show subtle variations in the long-range moire patterns. We show that monolayer graphene folded into an S-bend graphene pleat produces trilayer moire superlattices with both small (<2(degrees)) and larger twist angles (7-30(degrees)). Annular in-plane electric field concentrations are detected in high angle bilayers due to overlapping rotated graphene hexagons in each layer. The presence of a third low angle twisted layer in S-bend trilayer graphene, introduces a long-range modulation of the atomic structure so that no real space unit cell is detected. By directly imaging trilayer moire harmonics that span from picoscale to nanoscale using 4D-STEM, we gain insights into the complex spatial distributions of atomic density and electric fields in trilayer twisted layered materials.
引用
收藏
页码:19600 / 19612
页数:13
相关论文
共 50 条
  • [31] 4D Electron Microscopy: Principles and Applications
    Flannigan, David J.
    Zewail, Ahmed H.
    ACCOUNTS OF CHEMICAL RESEARCH, 2012, 45 (10) : 1828 - 1839
  • [32] 4D electron microscopy: A century of developments
    Zewail, Ahmed
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2016, 251
  • [33] Photo-excited hot carrier dynamics in hydrogenated amorphous silicon imaged by 4D electron microscopy
    Liao B.
    Najafi E.
    Li H.
    Minnich A.J.
    Zewail A.H.
    Nature Nanotechnology, 2017, 12 (9) : 871 - 876
  • [34] 4D electron microscopy: Developments and applications
    Zewail, Ahmed
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2015, 249
  • [35] Photo-excited hot carrier dynamics in hydrogenated amorphous silicon imaged by 4D electron microscopy
    Liao, Bolin
    Najafi, Ebrahim
    Li, Heng
    Minnich, Austin J.
    Zewail, Ahmed H.
    NATURE NANOTECHNOLOGY, 2017, 12 (09) : 871 - +
  • [36] Crystal lattice image reconstruction from Moire sampling scanning transmission electron microscopy
    Pofelski, A.
    Bicket, I
    Botton, G. A.
    ULTRAMICROSCOPY, 2022, 233
  • [37] Structure and mass analysis by scanning transmission electron microscopy
    Müller, SA
    Engel, A
    MICRON, 2001, 32 (01) : 21 - 31
  • [38] The structure of dodecagonal (Ta,V)1.6Te imaged by phase-contrast scanning transmission electron microscopy
    Krumeich, F.
    Mueller, E.
    Wepf, R. A.
    Conrad, M.
    Reich, C.
    Harbrecht, B.
    Nesper, R.
    JOURNAL OF SOLID STATE CHEMISTRY, 2012, 194 : 106 - 112
  • [39] 2D strain mapping using scanning transmission electron microscopy Moire interferometry and geometrical phase analysis
    Pofelski, A.
    Woo, S. Y.
    Le, B. H.
    Liu, X.
    Zhao, S.
    Mi, Z.
    Loeffler, S.
    Botton, G. A.
    ULTRAMICROSCOPY, 2018, 187 : 1 - 12
  • [40] 3D Strain Measurement of Heterostructures Using the Scanning Transmission Electron Microscopy Moire Depth Sectioning Method
    Wen, Huihui
    Zhang, Hongye
    Peng, Runlai
    Liu, Chao
    Liu, Shuman
    Liu, Fengqi
    Xie, Huimin
    Liu, Zhanwei
    SMALL METHODS, 2023, 7 (09)