Impact of Current on the Parallel Resistance and Junction Capacitance of Light-Emitting Diodes

被引:0
|
作者
Zhong, Chenming [1 ,2 ]
Lu, Yijun [1 ,2 ]
Fan, Xiaotong [1 ,2 ]
Chen, Guolong [1 ,2 ]
Gao, Yulin [1 ,2 ]
Zhu, Lihong [1 ,2 ]
Wang, Yong [3 ]
Zhao, Lihong [3 ]
Yang, Sihua [3 ]
Wang, Liqiang [3 ]
Chen, Zhong [1 ,2 ]
Guo, Weijie [1 ,2 ]
机构
[1] Xiamen Univ, Sch Elect Sci & Engn, Dept Elect Sci, Natl Innovat Platform Fus Ind & Educ Integrated Ci, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
[3] AOTO Elect Co Ltd, Shenzhen 518052, Peoples R China
基金
中国国家自然科学基金;
关键词
Light emitting diodes; Resistance; Capacitance; Impedance; Current measurement; Voltage measurement; Junctions; I-V characteristic; junction capacitance; light-emitting diodes (LEDs); parallel resistance; BANDWIDTH;
D O I
10.1109/TED.2023.3296072
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The characteristics of the parallel resistance and junction capacitance (PRJC) of tricolor light-emitting diodes (LEDs) driven by periodic pulse currents were investigated, revealing that as the drive current increases, the parallel resistance decreases while the junction capacitance increases. The product of PRJC tends to decrease with increasing pulsewidth or amplitude of the driving current. The impedance spectra of LEDs were employed to extract the PRJC. When the voltage is close to the threshold, the parallel resistance dominates; however, the series resistance becomes dominant when the voltage exceeds the threshold. The impact of the parallel resistance on the I-V relationship cannot be ignored when LEDs operate under low-frequency pulse current and low current conditions.
引用
收藏
页码:316 / 321
页数:6
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