Impact of Current on the Parallel Resistance and Junction Capacitance of Light-Emitting Diodes

被引：0

作者：

Zhong, Chenming ^{[1
,2
]}

Lu, Yijun ^{[1
,2
]}

Fan, Xiaotong ^{[1
,2
]}

Chen, Guolong ^{[1
,2
]}

Gao, Yulin ^{[1
,2
]}

Zhu, Lihong ^{[1
,2
]}

Wang, Yong ^{[3
]}

Zhao, Lihong ^{[3
]}

Yang, Sihua ^{[3
]}

Wang, Liqiang ^{[3
]}

Chen, Zhong ^{[1
,2
]}

Guo, Weijie ^{[1
,2
]}

机构：

[1] Xiamen Univ, Sch Elect Sci & Engn, Dept Elect Sci, Natl Innovat Platform Fus Ind & Educ Integrated Ci, Xiamen 361005, Peoples R China

[2] Xiamen Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China

[3] AOTO Elect Co Ltd, Shenzhen 518052, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Light emitting diodes; Resistance; Capacitance; Impedance; Current measurement; Voltage measurement; Junctions; I-V characteristic; junction capacitance; light-emitting diodes (LEDs); parallel resistance; BANDWIDTH;

D O I：

10.1109/TED.2023.3296072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of the parallel resistance and junction capacitance (PRJC) of tricolor light-emitting diodes (LEDs) driven by periodic pulse currents were investigated, revealing that as the drive current increases, the parallel resistance decreases while the junction capacitance increases. The product of PRJC tends to decrease with increasing pulsewidth or amplitude of the driving current. The impedance spectra of LEDs were employed to extract the PRJC. When the voltage is close to the threshold, the parallel resistance dominates; however, the series resistance becomes dominant when the voltage exceeds the threshold. The impact of the parallel resistance on the I-V relationship cannot be ignored when LEDs operate under low-frequency pulse current and low current conditions.

引用

页码：316 / 321

页数：6

共 50 条

[1] Negative capacitance in polymer light-emitting diodes
Huang Wen-Bo
Zeng Wen-Jin
Wang Li
Peng Jun-Biao
ACTA PHYSICA SINICA, 2008, 57 (09) : 5983 - 5988
[2] Negative capacitance in organic light-emitting diodes
Pingree, LSC
Scott, BJ
Russell, MT
Marks, TJ
Hersam, MC
APPLIED PHYSICS LETTERS, 2005, 86 (07) : 1 - 3
[3] Negative capacitance in polymer light-emitting diodes
Institute of Polymer Optoelectronic Material and Devices, South China University of Technology, Guangzhou 510640, China
不详
Wuli Xuebao, 2008, 9 (5983-5988): : 5983 - 5988
[4] Method for determining the junction temperature of alternating current light-emitting diodes
Hwu, F. -S.
Sheu, G. -J.
Lin, M. -T.
Chen, J. -C.
IET SCIENCE MEASUREMENT & TECHNOLOGY, 2009, 3 (02) : 159 - 164
[5] Junction temperature measurement of light-emitting diodes using temperature-dependent capacitance
Zhao Yu
Wei Ai-Xiang
Liu Jun
ACTA PHYSICA SINICA, 2015, 64 (11)
[6] Influence of capacitance effect on alternating-current organic light-emitting diodes
Liu, D
Teng, F
Xu, Z
Yang, SY
Quan, SY
He, QF
Wang, YS
Xu, XR
SOLID STATE COMMUNICATIONS, 2006, 137 (07) : 391 - 394
[7] Junction temperature in ultraviolet light-emitting diodes
Xi, YG
Gessmann, T
Xi, JQ
Kim, JK
Shah, JM
Schubert, EF
Fischer, AJ
Crawford, MH
Bogart, KHA
Allerman, AA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10): : 7260 - 7266
[8] Method for measuring the mean junction temperature of alternating current light-emitting diodes
Hwu, F. S.
Yang, C. H.
Chen, J. C.
MEASUREMENT SCIENCE AND TECHNOLOGY, 2011, 22 (04)
[9] Deep saturation of junction voltage at large forward current of light-emitting diodes
Feng, L. F.
Li, D.
Zhu, C. Y.
Wang, C. D.
Cong, H. X.
Zhang, G. Y.
Du, W. M.
JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)
[10] Deep saturation of junction voltage at large forward current of light-emitting diodes
Feng, L.F.
Li, D.
Zhu, C.Y.
Wang, C.D.
Cong, H.X.
Zhang, G.Y.
Du, W.M.
Journal of Applied Physics, 2007, 102 (09):

← 1 2 3 4 5 →