The thickness effect on the compensation temperature of rare-earth garnet thin films

被引：6

作者：

Liang, Jing Ming ^{[1
]}

Zhao, Xu Wen ^{[1
]}

Liu, Yu Kuai ^{[2
]}

Li, Pei Gen ^{[1
]}

Ng, Sheung Mei ^{[1
]}

Wong, Hon Fai ^{[1
]}

Cheng, Wang Fai ^{[1
]}

Zhou, Yan ^{[3
]}

Dai, Ji Yan ^{[1
]}

Mak, Chee Leung ^{[1
]}

Leung, Chi Wah ^{[1
]}

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Hong Kong, Peoples R China

[2] Zhaoqing Univ, Coll Elect Informat & Mechatron Engn, Zhaoqing 526061, Guangdong, Peoples R China

[3] Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen 518172, Guangdong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 24期

关键词：

IRON-GARNET; MAGNETIZATION COMPENSATION; DYNAMICS; ORIGIN;

D O I：

10.1063/5.0150228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The anomalous Hall effect measurements are used to probe the magnetization reversal of terbium iron garnet (TbIG) thin films at different temperatures. The compensation temperature (T-comp) of TbIG thin films is revealed, and the film thickness effect on the T-comp is studied. The results indicate a rise of T-comp along with decreasing film thickness. We postulate two possible origins for the observed behavior, namely interfacial element diffusion and strain effects between TbIG films and Gd3Ga5O12 substrates. The results have implications for the study of spintronic devices based on ultrathin rare-earth iron garnet thin films.

引用

页数：6

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