High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

被引：3
|
作者：
Deng, Gaoqiang [1 ]
Zhang, Lidong [1 ]
Niu, Yunfei [1 ]
Yu, Jiaqi [1 ]
Ma, Haotian [1 ]
Yang, Shixu [1 ]
Zuo, Changcai [1 ]
Qian, Haotian [1 ]
Duan, Bin [2 ]
Zhang, Baolin [1 ]
Zhang, Yuantao [1 ]
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Phys, Changchun 130012, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Diode; hole injection; AlGaN; ultraviolet; RECOMBINATION; EFFICIENCY;
D O I：
10.1109/LED.2023.3279450
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High hole injection is desired for improving the performance of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs). In this work, we adopted a compositionally graded p-Aly1Ga1-y1N/Al0.85Ga0.15N superlattice (SL) structure in a nitrogen-polarity DUV LED. Our numerical simulation results show that this SL structure is very beneficial to the hole injection into the active region, and leads to a low turn-on voltage and device resistance. This is significant because a low device resistance means a low power consumption and a high wall-plug efficiency. Meanwhile, a DUV LED with compositionally graded SL has a peak internal quantum efficiency (72%) that is much higher than that of the reference DUV LED without an SL (56%). This work provides an attractive approach to effectively injecting holes into the active region of a nitrogen-polarity AlGaN-based DUV LED.
引用
收藏
页码：1076 / 1079
页数：4
相关论文
共 50 条
  • [41] Manipulation of Si Doping Concentration for Modification of the Electric Field and Carrier Injection for AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
    Fang, Mengqian
    Tian, Kangkai
    Chu, Chunshuang
    Zhang, Yonghui
    Zhang, Zi-Hui
    Bi, Wengang
    CRYSTALS, 2018, 8 (06):
  • [42] High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
    Passow, Thorsten
    Gutt, Richard
    Kunzer, Michael
    Pletschen, Wilfried
    Kirste, Lutz
    Forghani, Kamran
    Scholz, Ferdinand
    Koehler, Klaus
    Wagner, Joachim
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
  • [43] AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template
    Sang Li-Wen
    Qin Zhi-Xin
    Fang Hao
    Zhang Yan-Zhao
    Li Tao
    Xu Zheng-Yu
    Yang Zhi-Jian
    Shen Bo
    Zhang Guo-Yi
    Li Shu-Ping
    Yang Wei-Huang
    Chen Hang-Yang
    Liu Da-Yi
    Kang Jun-Yong
    CHINESE PHYSICS LETTERS, 2009, 26 (11)
  • [44] Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
    Inazu, Tetsuhiko
    Fukahori, Shinya
    Pernot, Cyril
    Kim, Myung Hee
    Fujita, Takehiko
    Nagasawa, Yosuke
    Hirano, Akira
    Ippommatsu, Masamichi
    Iwaya, Motoaki
    Takeuchi, Tetsuya
    Kamiyama, Satoshi
    Yamaguchi, Masahito
    Honda, Yoshio
    Amano, Hiroshi
    Akasaki, Isamu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (12)
  • [45] High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer
    Liu, Xu
    Xu, Shengrui
    Tao, Hongchang
    Cao, Yanrong
    Wang, Xinhao
    Shan, Hengsheng
    Zhang, Jincheng
    Hao, Yue
    IEEE PHOTONICS JOURNAL, 2023, 15 (02):
  • [46] Investigation of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with AlInGaN/AlInGaN Superlattice Electron Blocking Layer
    Chen, Ximeng
    Yin, Yi'an
    Wang, Dunnian
    Fan, Guanghan
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (04) : 2572 - 2576
  • [47] Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron blocking layers
    Shi, Hengzhi
    Gu, Huaimin
    Li, Jihang
    Yang, Xianqi
    Zhang, Jinyuan
    Yuan, Rui
    Chen, Ximeng
    Liu, Nana
    OPTICS COMMUNICATIONS, 2019, 441 : 149 - 154
  • [48] Improvement of AlGaN-based deep ultraviolet light-emitting diodes by using a graded AlGaN superlattice hole reservoir layer
    Wang, Xin
    Sun, Hui-Qing
    Guo, Zhi-You
    OPTICAL MATERIALS, 2018, 86 : 133 - 137
  • [49] Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer
    Zhao, Fengyi
    Jia, Wei
    Dong, Hailiang
    Jia, Zhigang
    Li, Tianbao
    Yu, Chunyan
    Zhang, Zhuxia
    Xu, Bingshe
    AIP ADVANCES, 2022, 12 (12)
  • [50] Investigation of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with AlInGaN/AlInGaN Superlattice Electron Blocking Layer
    Ximeng Chen
    Yi’an Yin
    Dunnian Wang
    Guanghan Fan
    Journal of Electronic Materials, 2019, 48 : 2572 - 2576
12345