Engineering Grain Boundaries in Two-Dimensional Electronic Materials

被引：11
|
作者：
Yang, Seong-Jun [1 ,2 ]
Choi, Min-Yeong [1 ,2 ]
Kim, Cheol-Joo [1 ,2 ]
机构：
[1] Inst Basic Sci IBS, Ctr Epitaxial van der Waals Quantum Solids, Pohang 37673, Gyeongbuk, South Korea
[2] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, Gyeongbuk, South Korea
来源：
ADVANCED MATERIALS | 2023年 / 35卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
dislocation; grain boundaries; stacking orders; tilt boundaries; twist boundaries; two-dimensional materials; van der Waals structures; HEXAGONAL BORON-NITRIDE; DER-WAALS HETEROSTRUCTURES; DISLOCATION-DRIVEN GROWTH; VAN-HOVE SINGULARITIES; STACKING-ORDER; TOPOLOGICAL DEFECTS; LAYERED MATERIALS; EPITAXIAL-GROWTH; 2D MATERIALS; FEW-LAYER;
D O I：
10.1002/adma.202203425
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.
引用
收藏
页数：18
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