Localized anodization of 4H-SiC by electrochemical etching with constant current mode in KOH solutions

With the increasing application of SiC, it has become increasingly evident that high hardness and difficulty in etching are major issues. Wet etching is a popular method due to its low cost and convenience. Electrochemical (EC) etching is one such wet-etching technique used for removing SiC material. Currently, most studies on EC focus on constant voltage mode with few investigations into constant current mode operation. In this study, we investigate the EC etching of 4H-SiC under a constant current regime by analyzing basic reaction processes through changes in voltage curves while studying large-period pulse etching modes as well as examining how different magnitudes of electric currents affect the process outcome. We hope our systematic research will contribute towards advancing knowledge about using EC techniques under continuous-current conditions thereby promoting wider application possibilities for this type of surface modification approach.