Use of Special Devices for the X-Ray Interferometric Investigation of Structural Imperfections in Single Crystals

被引:0
|
作者
Drmeyan, H. R. [1 ,2 ]
Vasilyan, M. S. [1 ]
机构
[1] Natl Acad Sci Republ Armenia, Inst Appl Problems Phys, Yerevan 0014, Armenia
[2] Nalbandyan State Univ Shirak, Gyumri 3126, Shirak, Armenia
来源
JOURNAL OF SURFACE INVESTIGATION | 2023年 / 17卷 / 05期
关键词
multiple interferometers; moire topogram; crystal-block bending; structural defects; scratch; dislocation generation; stress field; DIFFRACTION; DISLOCATIONS; FRINGES; FIELD;
D O I
10.1134/S1027451023050038
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A universal device for the X-ray interferometric study of structural defects in single crystals is designed, manufactured, and tested. The device can serve both for scratching the surface of the crystal block of an interferometer and for bending it. A technology for generating a dislocation in an interferometer block is also proposed. It is experimentally proved that the moire topographic patterns obtained using a double X-ray interferometer depend on the orientation of the reflection planes relative to the defect (dislocation). It is shown that multiple interferometers make it possible to simultaneously observe images of various structural imperfections. The results obtained make it possible to judge the spatial orientation of defects and the distribution of stress fields caused by these defects, i.e., stress fields can be visualized as X-ray moire patterns. The results obtained in this work can form the basis for solving the inverse task, namely, the restoration of mechanical stress fields in the crystal blocks of an interferometer by the decoding of moire patterns.
引用
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页码:1028 / 1033
页数:6
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