Voltage-controlled bimeron diode-like effect in nanoscale information channel

被引：8
|
作者：
Hu, Gengxin [1 ,2 ]
Luo, Jia [3 ]
Wang, Junlin [2 ]
Lu, Xianyang [1 ]
Zhao, Guoping [3 ]
Liu, Yuan [2 ]
Wu, Jing [4 ]
Xu, Yongbing [1 ,4 ]
机构：
[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China
[2] Guangdong Univ Technol, Sch Integrated Circuits, Guangzhou 510006, Peoples R China
[3] Sichuan Normal Univ, Coll Phys & Elect Engn, Chengdu 610068, Peoples R China
[4] Univ York, Sch Phys Engn & Technol, York YO10 5DD, England
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2023年 / 56卷 / 08期
基金：
中国国家自然科学基金;
关键词：
voltage-controlled; racetrack memory; magnetic bimeron; SKYRMION LATTICE; STATE;
D O I：
10.1088/1361-6463/acb219
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The magnetic bimeron, as the in-plane counterpart of the magnetic skyrmion, has potential applications in next-generation spin memory devices due to its lower energy consumption. In this work, the dynamic behavior of a current-driven bimeron in a nanotrack with voltage-controlled magnetic anisotropy (VCMA) is investigated. By adjusting the profile of the VCMA, the bimeron can display a diode-like unidirectional behavior in the nanotrack. The unidirectional behavior can be modulated by changing the driven current density and width of the VCMA region. The trajectory of the bimeron can also be controlled by the periodic VCMA region, which can enhance the stability of bimeron and realize a high-storage density bimeron-based information channel.
引用
收藏
页数：9
相关论文
共 50 条
  • [31] Controllable transport of a skyrmion in a ferromagnetic narrow channel with voltage-controlled magnetic anisotropy
    Wang, Junlin
    Xia, Jing
    Zhang, Xichao
    Zhao, G. P.
    Ye, Lei
    Wu, Jing
    Xu, Yongbing
    Zhao, Weisheng
    Zou, Zhigang
    Zhou, Yan
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (20)
  • [32] Guided motion of a magnetic skyrmion by a voltage-controlled strained channel, and logic applications
    He, Xinyan
    Yu, Guoliang
    Zhu, Mingmin
    Qiu, Yang
    Zhou, Haomiao
    PHYSICAL REVIEW APPLIED, 2024, 22 (05):
  • [33] IP Core Protection using Voltage-Controlled Side-Channel Receivers
    Samarin, Peter
    Lemke-Rust, Kerstin
    Paar, Christof
    PROCEEDINGS OF THE 2016 IEEE INTERNATIONAL SYMPOSIUM ON HARDWARE ORIENTED SECURITY AND TRUST (HOST), 2016, : 217 - 222
  • [34] Voltage-controlled gating at the intracellular entrance to a hyperpolarization-activated cation channel
    Rothberg, BS
    Shin, KS
    Phale, PS
    Yellen, G
    JOURNAL OF GENERAL PHYSIOLOGY, 2002, 119 (01): : 83 - 91
  • [35] Voltage-controlled radial wrinkles of a trumpet-like dielectric elastomer structure
    Mao, Guoyong
    Wu, Lei
    Fu, Yimou
    Liu, Junjie
    Qu, Shaoxing
    AIP ADVANCES, 2018, 8 (03):
  • [36] PHOTONIC MEMORY SWITCH - MONOLITHIC INTEGRATION OF A VOLTAGE-CONTROLLED BISTABLE LASER DIODE AND AN OPTICAL GATE
    TSUDA, H
    KUROKAWA, T
    UENOHARA, H
    IWAMURA, H
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (07) : 760 - 762
  • [37] Voltage-Controlled Double-Resonance Quartz Oscillator Using Variable-Capacitance Diode
    Ruslan, Ruzaini Izyan Binti
    Satoh, Tomio
    Akitsu, Tetsuya
    IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2012, 59 (04) : 738 - 745
  • [38] Voltage-controlled sub-terahertz oscillation of resonant tunnelling diode integrated with slot antenna
    Orihashi, N
    Hattori, S
    Suzuki, S
    Asada, M
    ELECTRONICS LETTERS, 2005, 41 (15) : 872 - 874
  • [39] Understanding voltage-controlled magnetic anisotropy effect at Co/oxide interface
    Tomohiro Nozaki
    Jun Okabayashi
    Shingo Tamaru
    Makoto Konoto
    Takayuki Nozaki
    Shinji Yuasa
    Scientific Reports, 13
  • [40] Phase-field modeling of switchable diode-like current-voltage characteristics in ferroelectric BaTiO3
    Cao, Y.
    Shen, J.
    Randall, C. A.
    Chen, L. Q.
    APPLIED PHYSICS LETTERS, 2014, 104 (18)
12345