Voltage-controlled bimeron diode-like effect in nanoscale information channel

被引:8
|
作者
Hu, Gengxin [1 ,2 ]
Luo, Jia [3 ]
Wang, Junlin [2 ]
Lu, Xianyang [1 ]
Zhao, Guoping [3 ]
Liu, Yuan [2 ]
Wu, Jing [4 ]
Xu, Yongbing [1 ,4 ]
机构
[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China
[2] Guangdong Univ Technol, Sch Integrated Circuits, Guangzhou 510006, Peoples R China
[3] Sichuan Normal Univ, Coll Phys & Elect Engn, Chengdu 610068, Peoples R China
[4] Univ York, Sch Phys Engn & Technol, York YO10 5DD, England
基金
中国国家自然科学基金;
关键词
voltage-controlled; racetrack memory; magnetic bimeron; SKYRMION LATTICE; STATE;
D O I
10.1088/1361-6463/acb219
中图分类号
O59 [应用物理学];
学科分类号
摘要
The magnetic bimeron, as the in-plane counterpart of the magnetic skyrmion, has potential applications in next-generation spin memory devices due to its lower energy consumption. In this work, the dynamic behavior of a current-driven bimeron in a nanotrack with voltage-controlled magnetic anisotropy (VCMA) is investigated. By adjusting the profile of the VCMA, the bimeron can display a diode-like unidirectional behavior in the nanotrack. The unidirectional behavior can be modulated by changing the driven current density and width of the VCMA region. The trajectory of the bimeron can also be controlled by the periodic VCMA region, which can enhance the stability of bimeron and realize a high-storage density bimeron-based information channel.
引用
收藏
页数:9
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