Ultralow-Power Vertical Transistors for Multilevel Decoding Modes

被引:40
|
作者
Zhang, Qing [1 ,2 ]
Li, Enlong [3 ,4 ]
Wang, Yongshuai [5 ]
Gao, Changsong [3 ,4 ]
Wang, Congyong [1 ,2 ]
Li, Lin [6 ]
Geng, Dechao [7 ]
Chen, Huipeng [3 ,4 ]
Chen, Wei [1 ,2 ]
Hu, Wenping [1 ,7 ]
机构
[1] Int Campus Tianjin Univ, Joint Sch Natl Univ Singapore & Tianjin Univ, Fuzhou 350207, Peoples R China
[2] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[3] Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China
[4] Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
[5] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100190, Peoples R China
[6] Tianjin Univ, Inst Mol Plus, Tianjin 300072, Peoples R China
[7] Tianjin Univ, Sch Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
基金
国家重点研发计划;
关键词
artificial synapses; microspacing in-air sublimation; organic vertical transistors; ultralow power consumption; FIELD-EFFECT TRANSISTOR; LOW-VOLTAGE; ARTIFICIAL SYNAPSE; INJECTION; BARRIER;
D O I
10.1002/adma.202208600
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic field-effect transistors with parallel transmission and learning functions are of interest in the development of brain-inspired neuromorphic computing. However, the poor performance and high power consumption are the two main issues limiting their practical applications. Herein, an ultralow-power vertical transistor is demonstrated based on transition-metal carbides/nitrides (MXene) and organic single crystal. The transistor exhibits a high J(ON) of 16.6 mA cm(-2) and a high J(ON)/J(OFF) ratio of 9.12 x 10(5) under an ultralow working voltage of -1 mV. Furthermore, it can successfully simulate the functions of biological synapse under electrical modulation along with consuming only 8.7 aJ of power per spike. It also permits multilevel information decoding modes with a significant gap between the readable time of professionals and nonprofessionals, producing a high signal-to-noise ratio up to 114.15 dB. This work encourages the use of vertical transistors and organic single crystal in decoding information and advances the development of low-power neuromorphic systems.
引用
收藏
页数:12
相关论文
共 50 条
  • [21] Ultralow-power CMOS/SOI circuit technology
    Kado, Yuichi
    Douseki, Takakuni
    Matsuya, Yasuyuki
    Tsukahara, Tsuneo
    Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi), 2008, 162 (03): : 38 - 43
  • [22] Ultralow-power optoelectronic synaptic transistors based on polyzwitterion dielectrics for in-sensor reservoir computing
    Wu, Xiaosong
    Shi, Shuhui
    Liang, Baoshuai
    Dong, Yu
    Yang, Rumeng
    Ji, Ruiduan
    Wang, Zhongrui
    Huang, Weiguo
    SCIENCE ADVANCES, 2024, 10 (16)
  • [23] ULPAC: A Miniaturized Ultralow-Power Atomic Clock
    Zhang, Haosheng
    Herdian, Hans
    Narayanan, Aravind Tharayil
    Shirane, Atsushi
    Suzuki, Mitsuru
    Harasaka, Kazuhiro
    Adachi, Kazuhiko
    Goka, Shigeyoshi
    Yanagimachi, Shinya
    Okada, Kenichi
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2019, 54 (11) : 3135 - 3148
  • [24] Algorithm yields ultralow-power image sensor
    Brown, Chapped
    Electronic Engineering Times, 2005, (1402)
  • [25] Ultralow-power all-optical switching
    Soljacic, M
    Lidorikis, E
    Joannopoulos, JD
    Hau, LV
    APPLIED PHYSICS LETTERS, 2005, 86 (17) : 1 - 3
  • [26] Ultralow-power CMOS/SOI circuit technology
    Kado, Yuichi
    Douseki, Takakuni
    Matsuya, Yasuyuki
    Tsukahara, Tsuneo
    ELECTRICAL ENGINEERING IN JAPAN, 2008, 162 (03) : 38 - 43
  • [27] An Ultralow-Power Receiver for Wireless Sensor Networks
    Ayers, James
    Mayaram, Kartikeya
    Fiez, Terri S.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (09) : 1759 - 1769
  • [28] Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
    Qilin Hua
    Guoyun Gao
    Chunsheng Jiang
    Jinran Yu
    Junlu Sun
    Taiping Zhang
    Bin Gao
    Weijun Cheng
    Renrong Liang
    He Qian
    Weiguo Hu
    Qijun Sun
    Zhong Lin Wang
    Huaqiang Wu
    Nature Communications, 11
  • [30] Design of thin-body double-gated vertical-channel tunneling field-effect transistors for ultralow-power logic circuits
    Inter-University Semiconductor Research Center, School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea, Republic of
    不详
    Jpn. J. Appl. Phys., 4 PART 2