Polarization-Dependent Memory and Erasure in Quantum Dots/Graphene Synaptic Devices

被引:0
|
作者
Lee, Ki-Jeong [1 ]
Kim, Jin Hyung [1 ]
Jeon, Sooin [1 ]
Shin, Chi Won [1 ,2 ,3 ]
Kim, Ha-Reem [2 ,3 ]
Park, Hong-Gyu [2 ,3 ]
Kim, Jungkil [1 ]
机构
[1] Jeju Natl Univ, Dept Phys, Seoul 63243, South Korea
[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea
[3] Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea
基金
新加坡国家研究基金会;
关键词
Synaptic device; optoelectronics; photonicdevice; graphene; quantum dot; SYNAPSES; GRAPHENE; CELL;
D O I
10.1021/acs.nanolett.4c00124
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate excitatory and inhibitory properties in a single heterostructure consisting of two quantum dots/graphene synaptic elements using linearly polarized monochromatic light. Perovskite quantum dots and PbS quantum dots were used to increase and decrease photocurrent weights, respectively. The polarization-dependent photocurrent was realized by adding a polarizer in the middle of the PbS quantum dots/graphene and perovskite quantum dots/graphene elements. When linearly polarized light passed through the polarizer, both the lower excitatory and upper inhibitory devices were activated, with the lower device with the stronger response dominating to increase the current weight. In contrast, the polarized light was blocked by the polarizer, and the above device was only operated, reducing the current weight. Furthermore, two orthogonal polarizations of light were used to perform the sequential processes of potentiation and habituation. By adjustment of the polarization angle of light, not only the direction of the current weight but also its level was altered.
引用
收藏
页码:2421 / 2427
页数:7
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