Near-infrared wavelength tuning of monolayer graphene on Silicon Nitride waveguides

被引：1
|
作者：
Vorobev, Artem S. [1 ,2 ]
Bianco, Giuseppe Valerio [3 ]
Bruno, Giovanni [3 ]
D'Orazio, Antonella [1 ]
O'Faolain, Liam [2 ,4 ]
Grande, Marco [1 ]
机构：
[1] Politecn Bari, Dept Elect & Informat Engn, I-70126 Bari, Italy
[2] Munster Technol Univ, Ctr Adv Photon & Proc Anal, Cork T12 T66T, Ireland
[3] Univ Bari, Dept Chem, CNR Nanotec, Via Orabona 4, I-70123 Bari, Italy
[4] Tyndall Natl Inst, Cork T12 PX46, Ireland
来源：
PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS | 2023年 / 54卷
关键词：
Graphene; Silicon Nitride; Waveguides; Modulation; Tunable devices; Silicon photonics; HIGH EXTINCTION RATIO; ELECTROOPTIC MODULATORS; MODE; FIBER; RESONANCES; DESIGN; CAVITY; INDEX;
D O I：
10.1016/j.photonics.2023.101130
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, we detail the integration of monolayer graphene electrodes in Silicon Nitride waveguides to achieve wavelength tuning. The numerical results show that wavelength shifts of a few hundred to several thousand picometers shift can be obtained depending on the configuration. These results will help guide the design of graphene-based tunable optical devices operating in the near infrared range.
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收藏
页数：11
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