Features of Processing of Cadmium Zinc Telluride Wafers for Molecular Beam Epitaxy Growth of Cadmium Mercury Telluride Layers

被引：1

作者：

Trofimov, A. A. ^{[1
]}

Denisov, I. A. ^{[2
]}

Smirnova, N. A. ^{[2
]}

Shabrin, A. D. ^{[1
]}

Goncharov, A. E. ^{[1
]}

Novikova, A. A. ^{[1
]}

Mozhaeva, M. O. ^{[1
]}

Gladysheva, K. A. ^{[1
]}

Kosyakova, A. M. ^{[1
,3
]}

Malygin, V. A. ^{[1
]}

Kuznetsova, S. A. ^{[1
]}

Ilyinov, D. V. ^{[1
]}

Sukhanova, A. S. ^{[1
]}

机构：

[1] Orion R&P Assoc, Moscow 111538, Russia

[2] AO Giredmet, Moscow 119017, Russia

[3] Moscow Inst Phys & Technol, Dolgoprudnyi 141701, Moscow Oblast, Russia

来源：

JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2023年 / 68卷 / 09期

关键词：

cadmium zinc telluride; lapping and polishing; surface roughness; molecular beam epitaxy;

D O I：

10.1134/S1064226923090255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The cadmium mercury telluride solid solution is one of the most important infrared photoelectronic materials in the world. In obtaining this compound, molecular beam epitaxy has a number of advantages over other methods. At the same time, this solid solution is quite demanding on the pre-growth processing of substrates. In this study, the polishing processes are the primary development in mastering the production of cadmium mercury telluride (211) wafers. A roughness value of similar to 1 nm is obtained.

引用

页码：1114 / 1125

页数：12

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