Improving the Synaptic Behavior with Polar Orthorhombic Phase in Hf0.5Zr0.5O2 Film

As a high-& kappa; dielectric material,hafnium oxidehas excellentpotential for applications in the fields of both memristor and ferroelectricmaterials. It is now mostly believed that the ferroelectricity ofhafnium oxide films originates from the polar orthorhombic phase.The effect of this polar orthorhombic phase on the memristor propertiesof the hafnium oxide films is still uncertain. In this work, the proportionof the orthorhombic phase in the films was influenced by varying thepreparation parameters, and the microstructure was further determinedby microscopic characterization. High cooling rate favors the orthorhombicphase and more uniform microstructure, and the multiresistance stateand synaptic behavior of the HZO film was investigated, which showsthat the HZO film in the orthorhombic phase has good potential inmemristor applications.