Pulsed laser deposition of ZnGa2O4 thin films on Al2O3 and Si substrates for deep optoelectronic devices applications

被引：11

作者：

Guo, Anqi ^{[1
]}

Zhang, Lichun ^{[1
,2
]}

Cao, Ning ^{[1
]}

Lu, Taiping ^{[2
]}

Zhu, Yadan ^{[2
]}

Zhou, Zhiying ^{[1
]}

He, Shunli ^{[1
]}

Xia, Bin ^{[1
]}

Zhao, Fengzhou ^{[1
]}

机构：

[1] Ludong Univ, Sch Phys & Optoelect Engn, Yantai 264025, Peoples R China

[2] Ludong Univ, Sch Integrated Circuits, Yantai 264025, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 02期

基金：

中国国家自然科学基金;

关键词：

deep-ultraviolet photodetectors; pulsed laser deposition; thin films; ultra-wide band gap semiconductor; ZnGa2O4; ULTRAVIOLET PHOTODETECTOR; GALLIUM OXIDE; PHOTORESPONSE; PHOSPHORS;

D O I：

10.35848/1882-0786/acb98c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Due to the ultra-wideband gap, high transmittance in the ultraviolet (UV) region, and excellent environmental stability, zinc gallium oxide (ZnGa2O4) has attracted considerable interest in deep-ultraviolet photodetectors. Here, ZnGa2O4 thin film was fabricated on different substrates by pulsed laser deposition with a post-annealing process under an oxygen atmosphere. It is found that the substrates have a great impact on the morphology, structure, and crystal quality of thin film. After annealing, the thin film quality has been improved. The metal-semiconductor-metal photodetector shows excellent reproducible characteristics and fast response performance, which demonstrates great potential in next-generation optoelectronic devices.

引用

页数：5

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