Improved microwave dielectric properties of MgAl2O4 spinel ceramics through (Li1/3Ti2/3)3+ doping

被引:6
|
作者
Li, Xiao [1 ]
Yang, Xizhi [1 ]
Lai, Yuanming [1 ]
Zhang, Qin [2 ]
Li, Baoyang [1 ]
Qi, Cong [1 ]
Yin, Jun [1 ]
Wang, Fanshuo [1 ]
Wu, Chongsheng [1 ]
Su, Hua [2 ]
机构
[1] Chengdu Univ Technol, Sch Mech & Elect Engn, Chengdu 610059, Peoples R China
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
关键词
microwave dielectric ceramics; MgAl2O4 ceramic co-substitution; MgTi2O5; solid solubility limit; BOND-VALENCE PARAMETERS; CA;
D O I
10.1088/1674-1056/ac81a8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A series of nominal compositions MgAl2-x (Li1/3Ti2/3)( x )O-4 (x = 0, 0.04, 0.08, 0.12, 0.16, and 0.20) ceramics were successfully prepared via the conventional solid-state reaction route. The phase compositions, microstructures, and microwave dielectric properties were investigated. The results of x-ray diffraction (XRD) and scanning electron microscopy (SEM) showed that a single phase of MgAl2-x (Li1/3Ti2/3)( x )O-4 ceramics with a spinel structure was obtained at x <= 0.12, whereas the second phase of MgTi2O5 appeared when x > 0.12. The cell parameters were obtained by XRD refinement. As the x values increased, the unit cell volume kept expanding. This phenomenon could be attributed to the partial substitution of (Li1/3Ti2/3)(3+) for Al3+. Results showed that (Li1/3Ti2/3)(3+) doping into MgAl2O4 spinel ceramics effectively reduced the sintering temperature and improved the quality factor (Q (f)) values. Good microwave dielectric properties were achieved for a sample at x = 0.20 sintering at 1500 degrees C in air for 4 h: dielectric constant epsilon (r) = 8.78, temperature coefficient of resonant frequency tau (f) = -85 ppm/degrees C, and Q (f) = 62 300 GHz. The Q (f) value of the x = 0.20 sample was about 2 times higher than that of pure MgAl2O4 ceramics (31600 GHz). Thus, MgAl2-x (Li1/3Ti2/3)( x )O-4 ceramics with excellent microwave dielectric properties can be applied to 5G communications.
引用
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页数:6
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