The Temperature Dependence of Auger Recombination in Silicon

被引:0
|
作者
Ochoa, Jorge [1 ]
Bernardini, Simone [1 ]
Bertoni, Mariana [1 ]
机构
[1] Arizona State Univ, Tempe, AZ 85287 USA
关键词
D O I
10.1109/PVSC48320.2023.10359721
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
引用
收藏
页数:1
相关论文
共 50 条
  • [21] Temperature dependence of the threshold and Auger recombination in asymmetric quantum-well heterolasers
    Sukhoivanov, IA
    Mashoshina, OV
    Kononenko, VK
    Ushakov, DV
    LFNM 2003: LASER AND FIBER-OPTICAL NETWORKS MODELING, PROCEEDINGS, 2003, : 255 - 258
  • [22] Temperature dependence of the threshold and Auger recombination in asymmetric quantum-well heterolasers
    Sukhoivanov, IA
    Mashoshyna, OV
    Kononenko, VK
    Ushakov, DV
    ADVANCED OPTOELECTRONICS AND LASERS, 2003, 5582 : 203 - 210
  • [23] Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon
    Trupke, T
    Green, MA
    Würfel, P
    Altermatt, PP
    Wang, A
    Zhao, J
    Corkish, R
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) : 4930 - 4937
  • [24] Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon
    Trupke, T. (thorsten@trupke.de), 1600, American Institute of Physics Inc. (94):
  • [25] REMARKS ON THE CARRIER DENSITY DEPENDENCE OF AUGER RECOMBINATION
    HAUG, A
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (09): : L287 - L290
  • [26] Area and thickness dependence of Auger recombination in nanoplatelets
    Philbin, John P.
    Brumberg, Alexandra
    Diroll, Benjamin T.
    Cho, Wooje
    Talapin, Dmitri, V
    Schaller, Richard D.
    Rabani, Eran
    JOURNAL OF CHEMICAL PHYSICS, 2020, 153 (05):
  • [27] Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices
    Aytac, Y.
    Olson, B. V.
    Kim, J. K.
    Shaner, E. A.
    Hawkins, S. D.
    Klem, J. F.
    Olesberg, J.
    Flatte, M. E.
    Boggess, T. F.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (21)
  • [28] Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices
    Kioupakis, Emmanouil
    Yan, Qimin
    Steiauf, Daniel
    Van de Walle, Chris G.
    NEW JOURNAL OF PHYSICS, 2013, 15
  • [29] General parameterization of Auger recombination in crystalline silicon
    Kerr, MJ
    Cuevas, A
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 2473 - 2480
  • [30] MEASUREMENT OF AUGER RECOMBINATION IN SILICON BY LASER EXCITATION
    SVANTESSON, KG
    NILSSON, NG
    SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1603 - &