Realization of Visible-Light Detection in InGaZnO Thin-Film Transistor via Oxygen Vacancy Modulation through N2 Treatments

InGaZnO (IGZO) thin-film transistors (TFTs) have gained widespread use in active matrix (AM) displays due to their decent field-effect mobility and low off current. However, the wide bandgap of IGZO limits their application in visible light detection. This study presents an industry process-compatible method to achieve visible light detection in IGZO TFTs through N-2 treatment during the sputtering and annealing process for the first time. A comparison with control IGZO TFTs shows that the N-2-treated IGZO TFTs exhibit a high responsivity of 0.66 A W-1 and detectivity of 5.40 x 10(14) Jones for visible light detection. Based on X-ray photoelectron spectroscopy analysis and technology computer-aided design simulations, a model, focusing on oxygen vacancy modulation, is proposed to explain the visible-light sensitivity in IGZO TFTs with N-2 treatment. This work opens up new possibilities for the integration of IGZO photodetector into AM display panels to realize in-cell environmental detection and biometric recognition.