An Active Reflection Phase Shifter with High Gain for Reconfigurable Reflectarrays above 0.24 THz

被引：1

作者：

Kunakovskaya, Ekaterina ^{[1
]}

Ulusoy, Ahmet Cagri ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, Inst Radio Frequency Engn & Elect, Karlsruhe, Germany

来源：

2023 IEEE 23RD TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS | 2023年

关键词：

millimeter wave integrated circuits; phase shifters; reflection amplifier silicon germanium; heterojunction bipolar transistors; phased arrays;

D O I：

10.1109/SiRF56960.2023.10046266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a high frequency, high gain reflection-type phase shifter based on a reflection amplifier topology. A transistor switch within the amplifier acts as the phase-shifting part that can be digitally controlled and provides 1-bit phase resolution. The fabricated phase shifter is implemented in 0.13 mu m SiGe HBT technology, and the measured results show a reflection gain of 10.2/10.9 dB in two operational states with a phase change of 179 degrees at 257.5 GHz. The phase-shifter core occupies only 0.007 mm(2) of IC area.

引用

页码：41 / 43

页数：3

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