Fabrication and characterization of field-effect transistors based on MoS2 nanotubes prepared in anodic aluminum oxide templates

被引：1

作者：

Shiraiwa, Naoya ^{[1
]}

Murata, Kyosuke ^{[1
]}

Nakazawa, Takuto ^{[2
]}

Fukawa, Akihiro ^{[2
]}

Takase, Koichi ^{[2
]}

Ito, Takeshi ^{[1
]}

Shingubara, Shoso ^{[1
]}

Shimizu, Tomohiro ^{[1
]}

机构：

[1] Kansai Univ, Grad Sch Sci & Engn, Yamate Cho 3-3-35, Suita, Osaka 5648680, Japan

[2] Nihon Univ, Coll Sci & Technol, Kanda Surugadai 1-8, Tokyo 1018308, Japan

来源：

MICRO AND NANO ENGINEERING | 2023年 / 19卷

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

MoS2; Nanotube; Field-effect transistors; Anodic aluminum oxide; PERFORMANCE; MOBILITY; FET;

D O I：

10.1016/j.mne.2023.100200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Field-effect transistors (FETs) based on MoS2 nanotubes prepared in anodic aluminum oxide (AAO) templates have been fabricated and demonstrated in this work. MoS2 nanotubes were prepared by the thermal decomposition of (NH4)2MoS4 precursors in the AAO template. The diameter of the MoS2 nanotubes was approximately 80 nm, which corresponded to the size of the AAO template. Schottky-type FETs were prepared with Au and Pt electrodes, and the FETs exhibited n-type behavior, with on/off ratios that exceeded 103 at VSD = 0.5 V.

引用

页数：4

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