Experimental study of thermal annealing effects on evaporated platinum thin film with various substrate configurations

被引:2
|
作者
Chauhan, Ashish Kr [1 ]
Tiwari, Suvashish [1 ]
Singh, Satyapal [1 ]
Singh, Jaspreet [1 ]
Wadhwa, Manoj [1 ]
机构
[1] Govt India, Semicond Lab, Dept Space, Sas Nagar 160071, Punjab, India
关键词
HIGH-TEMPERATURE DEGRADATION; MICRO-HOTPLATE;
D O I
10.1007/s00542-022-05394-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this manuscript, thermal annealing effects on platinum (Pt) thin film on various substrate configurations have been studied experimentally. The objective of this study is to attain a thermally stable 'Pt' film that can sustain annealing temperatures > 500 degrees C for gas sensing applications. 200 nm thick 'Pt' was evaporated using Electron Beam (E-Beam) Evaporation System on silicon substrate. High temperature (> 450 degrees C) degradation of platinum films with different adhesion layers of titanium and its oxide was examined on silicon substrate. Impact of annealing at two different peak temperatures viz. 450 degrees C and 520 degrees C on platinum film was studied in terms of 'Pt' film morphological changes and electrical resistance variations. A novel method of making platinum micro-heater on titanium oxide film (prepared using rapid thermal anneal process) is described, which results into stable platinum film at annealing temperatures up to 520 degrees C.
引用
收藏
页码:107 / 114
页数:8
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