Blue and Green Low Threshold Laser Diodes With InAlN Claddings

被引：3

作者：

Malinverni, Marco ^{[1
]}

Castiglia, Antonino ^{[1
]}

Rossetti, Marco ^{[1
]}

Ferhatovic, Adin ^{[1
]}

Martin, Denis ^{[1
]}

Duelk, Marcus ^{[1
]}

Velez, Christian ^{[1
]}

机构：

[1] EXALOS AG, CH-8952 Schlieren, Switzerland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2023年 / 35卷 / 24期

关键词：

Optical reflection; Optical refraction; Lasers; Claddings; Wide band gap semiconductors; Optical waveguides; Aluminum gallium nitride; Blue lasers; green lasers; InAlGaN laser diode; low threshold; InAlN; AlInN; optical confinement; augmented reality; ALINN;

D O I：

10.1109/LPT.2023.3321420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on 300 mu m short cavity single transverse mode LDs employing n-type InAlN cladding layers. Threshold currents in the blue and green spectral range of 3.3 and 12.0 mA are demonstrated, respectively. This is accompanied by low electrical power consumption for optical powers in the mW range. Compared to conventional AlGaN-based devices having nominally identical active regions, an increase in modal gain is demonstrated, responsible for a approximate to 25% reduction in threshold currents. Fast-axis far field divergence angle measurements indicate that the modal gain improvement can be ascribed to a higher optical confinement factor when using InAlN.

引用

页码：1303 / 1306

页数：4

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