Fabrication of Selective Thermal Emitter with Multilayer Films for Mid-/Low-Temperature Infrared Stealth with Radiative Cooling

Infrared selective emitters are attracting more and more attention due to their modulation ability of infrared radiance, which provides an efficient ability to blend objects into the surrounding environment. In this paper, an Ag/ZnS/Si/Ag/Si multilayered emitter is proposed by virtue of impedance matching as well as Fabry-Perot cavity effect to achieve selective radiation in the infrared band. The emissivity of the fabricated selective emitter is measured to be & epsilon;(3-5 & mu;m) = 0.16 and & epsilon;(8-14 & mu;m) = 0.23 in the atmosphere windows, respectively, meeting the requirements of infrared stealth. Meanwhile, the emissivity at the non-atmospheric window (5-8 & mu;m) is as high as 0.78, which allows efficient heat dissipation to achieve radiative cooling. Furthermore, the selective emitter maintains excellent stealth performance until 350 & DEG;C, indicating its good heat resistance and dissipation at medium temperature. The proposed emitter with spectral selectivity provides a new strategy for the facile fabrication of mid-/low-temperature infrared stealth devices.