Thin films of Ba0.8Sr0.2TiO3 were obtained by high-frequency sputtering on (100)p-Si substrates. Results of studies of frequency and temperature dependences of real and imaginary parts of dielectric permittivity of Ba0.8Sr0.2TiO3 ferroelectric film on alternating electric current are presented. It has been found that the polarization process has an activation character, the real and imaginary parts of the dielectric permeability decrease with increasing frequency, and the decrease rate is much higher at relatively low frequencies than at high frequencies. The relaxation time has been calculated and this crystal has been found to have an electron polarization mechanism due to thermal motion.
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Russian Acad Sci, So Sci Ctr, Rostov Na Donu 344006, Russia
So Fed Univ, Rostov Na Donu 344090, RussiaRussian Acad Sci, So Sci Ctr, Rostov Na Donu 344006, Russia
Shirokov, V. B.
Golovko, Yu. I.
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Russian Acad Sci, So Sci Ctr, Rostov Na Donu 344006, RussiaRussian Acad Sci, So Sci Ctr, Rostov Na Donu 344006, Russia
Golovko, Yu. I.
Mukhortov, V. M.
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Russian Acad Sci, So Sci Ctr, Rostov Na Donu 344006, RussiaRussian Acad Sci, So Sci Ctr, Rostov Na Donu 344006, Russia
机构:
Zavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, KazanZavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, Kazan
Chibirev A.O.
Leontyev A.V.
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Zavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, KazanZavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, Kazan
Leontyev A.V.
Bannikov M.I.
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Zavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, KazanZavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, Kazan
Bannikov M.I.
Mamin R.F.
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Zavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, KazanZavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, Kazan