Ultrasonically sprayed Cs3Bi2I9 thin film based self-powered photodetector

被引:21
|
作者
Devasia, Sebin [1 ]
Shaji, S. [1 ,2 ]
Avellaneda, D. A. [1 ]
Martinez, J. A. Aguilar [1 ,3 ]
Krishnan, B. [1 ,2 ]
机构
[1] Univ Autonoma Nuevo Leon, Fac Ingn Mecan & Electr, San Nicolas De Los Garza 66455, Nuevo Leon, Mexico
[2] Univ Autonoma Nuevo Leon, Ctr Innovac Invest & Desarrollo Ingn & Tecnol CIID, Parque Invest & Innovac Tecnol PIIT, Apodaca 66600, Nuevo Leon, Mexico
[3] Fac Ingn Mecan & Electr, Ctr Invest Innovac Ingn Aeronaut CIIIA, Carretera Salinas Victoria, Apodaca 66600, Nuevo Leon, Mexico
关键词
All-inorganic; Lead-free perovskites; Ultrasonic spray; Thin film; Substrate temperature; Schottky photodiode; LEAD-FREE; SOLAR-CELLS; A(3)M(2)I(9); PEROVSKITES; MORPHOLOGY; CS; RB; BI;
D O I
10.1016/j.matchemphys.2023.127295
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present work, we report lead-free, all-inorganic, Cs3Bi2I9 perovskite-inspired films developed by ultrasonic spray deposition technique at various substrate temperatures which demonstrate promising photodetection properties without any external bias or power consumption. Uniform films of excellent adhesion to the substrate deposited from 150 to 400 degrees C were analyzed in detail using structural, morphological, optical and electrical characterization techniques. Highly crystalline films with well-packed grains were readily obtained below 325 degrees C substrate temperature. In addition, the degradation of the films during the growth at higher substrate temperatures was different from the normal decomposition of Cs3Bi2I9 due to post-deposition treatments. The thin films showed direct band gaps in the range of 1.8-2.1 eV with absorption coefficients in the order of similar to 104 cm(-1). Photocurrent in the nanoampere range was observed in all the phase-pure films under illumination by a 50 W halogen lamp. Moreover, the thin films were chemically stable even after rapid thermal processing up to 500 degrees C. Furthermore, self-powered photodetection using Ag/FTO/Cs3Bi2I9/C-Ag heterostructure is demonstrated under AM1.5 radiation as well as 532 and 405 nm laser illuminations. The highest responsivity and detectivity obtained for the Cs3Bi2I9-based photodetector were 0.0051 mAW(-1) and 5.93 x 108 Jones (405 nm, 50 mW), respectively. Our investigations suggest that the spray deposited Cs3Bi2I9 films are promising for self-powered devices, especially in blue light detectors.
引用
收藏
页数:11
相关论文
共 50 条
  • [21] CRYSTAL STRUCTURE OF CAESIUM BISMUTH IODIDE CS3BI2I9
    LINDQVIST, O
    ACTA CHEMICA SCANDINAVICA, 1968, 22 (09): : 2943 - +
  • [22] Showcasing a self-powered photoelectrochemical photodetector with ultrasonically exfoliated SnSe2 nanosheets
    Patel, Megha
    Bhakhar, Sanjay
    Solanki, G. K.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (08)
  • [23] Showcasing a self-powered photoelectrochemical photodetector with ultrasonically exfoliated SnSe2 nanosheets
    Megha Patel
    Sanjay Bhakhar
    G. K. Solanki
    Journal of Materials Science: Materials in Electronics, 2024, 35
  • [24] High responsivity, self-powered carbon–zinc oxide hybrid thin film based photodetector
    H. Ahmad
    T. Tamil
    Applied Nanoscience, 2018, 8 : 1755 - 1765
  • [25] Incommensurate phase in the layered hexagonal crystal Cs3Bi2I9
    I. P. Aleksandrov
    A. F. Bovina
    O. A. Ageev
    A. A. Sukhovskii
    Physics of the Solid State, 1997, 39 : 991 - 994
  • [26] Incommensurate phase in the layered hexagonal crystal Cs3Bi2I9
    Aleksandrov, IP
    Bovina, AF
    Ageev, OA
    Sukhovskii, AA
    PHYSICS OF THE SOLID STATE, 1997, 39 (06) : 991 - 994
  • [27] The phases of CS3Bi2I9 between RT and 190 K
    Arakcheeva, AV
    Bonin, M
    Chapuis, G
    Zaitsev, AI
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1999, 214 (05): : 279 - 283
  • [28] Effects of drying temperature on tomato-based thin film as self-powered UV photodetector
    Thu, Myo Myo
    Mastuda, Atsunori
    Cheong, Kuan Yew
    APPLIED SURFACE SCIENCE, 2018, 445 : 186 - 196
  • [29] Ferroelastic phase transition in Cs3Bi2I9 crystal.
    Melnikova, SV
    Shabanova, LA
    Zaitsev, AI
    Parshikov, SA
    Ageev, OA
    Aleksandrov, KS
    FERROELECTRICS LETTERS SECTION, 1996, 20 (5-6) : 163 - 167
  • [30] Effects of K, Rb, and Br doping on Cs3Bi2I9 3 Bi 2 I 9 perovskites: A design of experiments approach
    Medeiros, Rodolfo L. B. A.
    Melo, Dulce M. A.
    Oliveirab, Angelo A. S.
    Macedo, Heloisa P.
    Fabris, Guilherme S. L.
    Sambrano, Julio R.
    Maziviero, Fernando, V
    Braga, Renata M.
    Morgado Jr, Edisson
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 184