Floquet Simulators for Topological Surface States in Isolation

被引:7
|
作者
Kim, Kun Woo [1 ,2 ]
Bagrets, Dmitry [1 ]
Micklitz, Tobias [3 ]
Altland, Alexander [1 ]
机构
[1] Univ Cologne, Inst Theoret Phys, Zulpicher Str 77, D-50937 Cologne, Germany
[2] Chung Ang Univ, Dept Phys, Seoul 06974, South Korea
[3] Ctr Brasileiro Pesquisas Fis, Rua Xavier Sigaud 150, BR-22290180 Rio De Janeiro, Brazil
基金
新加坡国家研究基金会;
关键词
LOCALIZATION;
D O I
10.1103/PhysRevX.13.011003
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
With recent advances in time-resolved device control, the dynamical engineering of novel quantum phases is becoming reality. One of the striking new options is the dynamical generation of space-synthetic dimensions, transcending the confines of static crystalline solid-state physics. We apply this principle to propose protocols allowing for the engineered realization of topological surface states in isolation. As a concrete example, we consider 3D topological surface states of a 4D quantum Hall insulator via a (1 + 2syn)- dimensional protocol. We present first-principle analytical calculations demonstrating that no supporting 4D bulk phase is required for a 3D topological surface phase. We back the analytical approach by numerical simulations and present a detailed blueprint for the realization of the synthetic surface phase with existing quantum linear optical network device technology. We then discuss generalizations, including a proposal for a quantum simulator of the (1 + 1syn)-dimensional surface of the common 3D topological insulator.
引用
收藏
页数:18
相关论文
共 50 条
  • [31] Effects of topological and non-topological edge states on information propagation and scrambling in a Floquet spin chain
    Sur, Samudra
    Sen, Diptiman
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2024, 36 (12)
  • [32] Electronic transport in one-dimensional Floquet topological insulators via topological and nontopological edge states
    Mueller, Niclas
    Kennes, Dante M.
    Klinovaja, Jelena
    Loss, Daniel
    Schoeller, Herbert
    PHYSICAL REVIEW B, 2020, 101 (15)
  • [33] Occupation probabilities and current densities of bulk and edge states of a Floquet topological insulator
    Dehghani, Hossein
    Mitra, Aditi
    PHYSICAL REVIEW B, 2016, 93 (20)
  • [34] Selective scattering between Floquet-Bloch and Volkov states in a topological insulator
    Mahmood, Fahad
    Chan, Ching-Kit
    Alpichshev, Zhanybek
    Gardner, Dillon
    Lee, Young
    Lee, Patrick A.
    Gedik, Nuh
    NATURE PHYSICS, 2016, 12 (04) : 306 - U137
  • [35] Higher-order Floquet topological phases with corner and bulk bound states
    Rodriguez-Vega, Martin
    Kumar, Abhishek
    Seradjeh, Babak
    PHYSICAL REVIEW B, 2019, 100 (08)
  • [36] Floquet bands and photon-induced topological edge states of graphene nanoribbons*
    Wang, Weijie
    Lu, Xiaolong
    Xie, Hang
    CHINESE PHYSICS B, 2021, 30 (06)
  • [37] Floquet states and optical conductivity of an irradiated two-dimensional topological insulator
    Dabiri, S. Sajad
    Cheraghchi, Hosein
    Sadeghi, Ali
    PHYSICAL REVIEW B, 2022, 106 (16)
  • [38] Floquet bands and photon-induced topological edge states of graphene nanoribbons
    Wang, Weijie
    Lüu, Xiaolong
    Xie, Hang
    Chinese Physics B, 2021, 30 (06)
  • [39] Floquet bands and photon-induced topological edge states of graphene nanoribbons
    王威杰
    吕小龙
    谢航
    Chinese Physics B, 2021, (06) : 493 - 500
  • [40] Dissipative Floquet topological systems
    Dehghani, Hossein
    Oka, Takashi
    Mitra, Aditi
    PHYSICAL REVIEW B, 2014, 90 (19):