Additive engineering with sodium azide material for efficient carbon-based perovskite solar cells

被引:3
|
作者
Kumar, Anjan [1 ]
Sayyed, M. I. [2 ,3 ]
Sabugaa, Michael M. [4 ]
Singh, Sangeeta [5 ]
Gavilan, Juan Carlos Orosco [6 ]
Sharma, Amit [7 ]
机构
[1] GLA Univ, Solar Lab, Mathura 281406, India
[2] Isra Univ, Fac Sci, Dept Phys, Amman 11622, Jordan
[3] Imam Abdulrahman bin Faisal Univ IAU, Inst Res & Med Consultat IRMC, Dept Nucl Med Res, POB 1982, Dammam 31441, Saudi Arabia
[4] Agusan State Coll Agr & Technol, Dept Elect Engn, Agusan Del Sur, Philippines
[5] Natl Inst Technol NIT, Microelect & VLSI Lab, Patna 800005, India
[6] Univ Privada Norte, Lima, Peru
[7] Bharati Vidyapeeths Coll Engn, Dept Phys, A4 Paschim Vihar, New Delhi 110063, India
关键词
STABILITY; CONTACT; LAYERS;
D O I
10.1039/d3nj00837a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Perovskite solar cells with carbon electrodes (C-PSCs) are one of the low-cost and new-generation solar cell technologies to solve global energy demands. In the current research, an additive engineering approach to a perovskite precursor based on sodium azide (NaN3) material was employed to fabricate stable and efficient C-PSCs. The NaN3 additive boosted perovskite solution spreading on the SnO2 electron transport layer (ETL), resulting in a well-oriented perovskite layer with improved micro-morphology. The NaN3 additive reduced non-radiative charge recombination through the reduction of the trap density within the perovskite layer. This increased the photovoltaic performance and generated C-PSCs with a champion efficiency of 14.90%, higher than the 12.94% obtained for the unmodified C-PSCs. Indeed, the NaN3 modifier increased the J(SC) and fill factor (FF) parameters by reducing charge transfer resistance (R-ct) and increasing charge recombination resistance (R-rec). In addition, it was observed that the NaN3-modified C-PSCs present higher shelf and ambient stability than the unmodified C-PSCs, revealing the potential of the NaN3 material for assembling efficient and stable C-PSCs.
引用
收藏
页码:7765 / 7773
页数:9
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