Straining techniques for strain engineering of 2D materials towards flexible straintronic

被引:43
|
作者
Pandey, Mukesh [1 ]
Pandey, Cheeranjiv [1 ]
Ahuja, Rajeev [1 ,2 ]
Kumar, Rakesh [1 ]
机构
[1] Indian Inst Technol Ropar, Dept Phys, Rupnagar 140001, Punjab, India
[2] Uppsala Univ, Dept Phys & Astron, Condensed Matter Theory Grp, Box 516, S-75120 Uppsala, Sweden
基金
瑞典研究理事会;
关键词
2D materials; Strain engineering; Straining techniques; Straintronics; Flexible electronics; Piezotronics; TRANSITION-METAL DICHALCOGENIDES; DER-WAALS HETEROSTRUCTURE; ATOMIC-LAYER MOS2; RAMAN-SPECTROSCOPY; 2-DIMENSIONAL NANOMATERIALS; ELECTRICAL-PROPERTIES; MECHANICAL-PROPERTIES; MONOLAYER GRAPHENE; ELASTIC PROPERTIES; EFFECTIVE-MASS;
D O I
10.1016/j.nanoen.2023.108278
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Straintronics of two-dimensional (2D) materials offers enormous promise for both fundamental research and smart technologies. Strain engineering of 2D materials has recently witnessed an upsurge of interest, driven by the growing demands of building flexible semiconductor devices under miniaturization. 2D materials have received considerable attention to tune their fascinating electrical, optical, and vibrational properties for flexible electronics due to their high stretchability and flexibility. For this, a variety of controllable straining techniques have been developed by mimicking either natural phenomena or mechanical processes. In the literature, strained nano-/microstructures of 2D materials have been extensively reviewed for highlighting their potential in tunable electronics, however a systematic assessment of the straining techniques utilized to create such strained structures is still lacking. In this review, we provide detailed one-to-one assessments of the straining methods used to create diverse strained structures of 2D materials and their limitations, covering recent advancements and in-depth discussions. In addition, the importance and advantages of applying straining techniques to improve the performance of flexible straintronic devices have also been covered. These will open pathways for exploiting the straining techniques for their meticulous applications.
引用
收藏
页数:37
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