Influence of Temperature on Atmospheric Neutron-Induced SEB Failure Rate for SiC MOSFETs

被引：2
|
作者：
Peng, Chao [1 ]
Lei, Zhifeng [1 ]
Zhang, Zhangang [1 ]
He, Yujuan [1 ]
Ma, Teng [1 ]
Cai, Zongqi [1 ]
Chen, Yiqiang [1 ]
机构：
[1] China Elect Prod Reliabil & Environm Testing Res I, Sci & Technol Reliabil Phys & Applicat Elect Compo, Guangzhou 511370, Peoples R China
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2024年 / 71卷 / 02期
基金：
中国国家自然科学基金;
关键词：
SiC metal-oxide semiconductor field-effect transistor (MOSFET); single event burnout (SEB); spallation neutron source; temperature dependence; SINGLE-EVENT BURNOUT; IMPACT IONIZATION COEFFICIENTS; POWER MOSFETS;
D O I：
10.1109/TNS.2023.3348108
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The neutron-induced single event burnout (SEB) failure is investigated for SiC metal-oxide semiconductor field-effect transistor (MOSFET) by conducting spallation neutron irradiation at different temperatures in the range of -25 degrees C similar to 125 degrees C. The SEB failure rates of SiC MOSFETs at different temperatures and voltages are calculated based on the accelerated experimental results. It shows that the failure rates increase exponentially with drain bias voltages and decrease exponentially with temperatures. An empirical formula of failure rate as a function of voltage and temperature is established for the 900 V SiC MOSFET. The influence of temperature on SEB effect is also studied by technology computer aided design (TCAD) simulations.
引用
收藏
页码：160 / 166
页数：7
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