Construction of oxygen-vacancy abundant Co3O4 nanorods for high- performance solid-state supercapacitor

被引:21
|
作者
Zhang, Baohong [1 ]
Gao, Lingxiao [1 ]
Bai, Haoze [1 ]
Li, Yanhong [1 ]
Jia, Binbin [1 ]
Zhou, Xinyan [1 ]
Li, Anran [2 ,3 ]
Li, Lidong [1 ]
机构
[1] Beihang Univ, Beijing Adv Innovat Ctr Biomed Engn, Sch Chem, Beijing 100191, Peoples R China
[2] Beihang Univ, Beijing Adv Innovat Ctr Big Data Based Precis Med, Sch Engn Med, Beijing 100191, Peoples R China
[3] Beihang Univ, Key Lab Big Data Based Precis Med, Minist Ind & Informat Technol, Beijing, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Green strategy; Nanorods; Oxygen vacancies; Supercapacitor; GRAPHENE OXIDE; ELECTRODE MATERIALS; REDUCED GRAPHENE; NICKEL FOAM; ASYMMETRIC SUPERCAPACITORS; ENERGY; ARRAYS; POLYPYRROLE; CAPACITANCE; NANOSHEETS;
D O I
10.1016/j.jallcom.2022.167979
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Designing and optimizing electrode materials for supercapacitors (SCs) is generally considered to be an effective way to enhance their electrochemical performance. It is an attractive approach to obtaining high capacity electrodes by engineering the nanostructure and oxygen vacancies of electrodes. Herein, we de-veloped an efficient and green strategy to facilitate one-dimensional (1D) Co3O4 nanorods with abundant oxygen vacancies via Co nanorods oxidation by H2O2 treatment, significantly promoting the electrochemical energy storage. The unique Co3O4 NRs due to 1D nanostructure and oxygen vacancy, exhibit a high specific capacity of 627.4 mF cm-2 at a current density of 0.5 mA cm-2 and excellent rate capacity (57.8% capacitance retention at 10 mA cm-2). Furthermore, an asymmetric supercapacitor (ASC) constructed with the Co3O4 nanorods as electrode materials shows a high energy density of 0.187 mWh cm-2 at a power density of 1.261 mW cm-2. This nanostructure and vacancy engineering strategy put forward in this work is an in-spiring example for the design of the next generation of SCs.(c) 2022 Published by Elsevier B.V.
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页数:8
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