density functional theory;
figure of merit;
lattice thermal conductivity;
thermoelectric properties;
high- temperature thermoelectric properties;
PERFORMANCE;
HF;
COMPRESSIBILITY;
TEMPERATURE;
SC;
SB;
D O I:
10.1088/1402-4896/ad0004
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Converting waste heat into electric power using thermoelectric materials could significantly address global energy needs. Half-Heusler compounds exhibit significant promise as thermoelectric materials suitable for high temperatures, thereby offering a potential solution to address the energy crisis. By employing density functional theory (DFT), semi-classical Boltzmann transport theory (BTE), and density functional perturbation theory (DFPT), this study thoroughly examines the structural, electronic, magnetic, phonon, mechanical, and thermoelectric properties of 18 valence electron half Heusler compound NbIrSn. Considering the presence of heavy 5d transition element Ir in our compound, all calculations are carried out with and without spin-orbit coupling (SOC). This material display both dynamic and mechanical stability, and also possess the property of ductility as indicated by Pugh's ratio and Poisson's ratio. NbIrSn is identified as non-magnetic semiconductors with indirect band gaps of 0.65 eV and it reduces to 0.63 eV when SOC is included. The different transport parameters are analyzed in relation to the chemical potential and doping concentrations for different temperatures. The lattice thermal conductivity of the material at room temperature is measured to be 13.40 Wm-1K-1 and 14.81 Wm-1K-1without and with SOC respectively. The optimal zT values for NbIrSn at 1200 K are 0.98 with p-type doping and 0.31 with n-type doping. Incorporating SOC leads to a substantial improvement, raising the optimal zT values to 1.33 for p-type doping and 0.47 for n-type doping. In conclusion, incorporating SOC is essential when analyzing the characteristics of the proposed compound. The present study highlights NbIrSn as a potentially a favorable candidate for p-type doping on high-temperature power generation.
机构:
Dalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
Chen, Rongchun
Kang, Huijun
论文数: 0引用数: 0
h-index: 0
机构:
Dalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
Dalian Univ Technol, Ningbo Inst, Ningbo 315000, Peoples R ChinaDalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
Kang, Huijun
Min, Ruonan
论文数: 0引用数: 0
h-index: 0
机构:
Dalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
Min, Ruonan
Chen, Zongning
论文数: 0引用数: 0
h-index: 0
机构:
Dalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
Dalian Univ Technol, Ningbo Inst, Ningbo 315000, Peoples R ChinaDalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
Chen, Zongning
Guo, Enyu
论文数: 0引用数: 0
h-index: 0
机构:
Dalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
Dalian Univ Technol, Ningbo Inst, Ningbo 315000, Peoples R ChinaDalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
Guo, Enyu
Yang, Xiong
论文数: 0引用数: 0
h-index: 0
机构:
Dalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
Yang, Xiong
Wang, Tongmin
论文数: 0引用数: 0
h-index: 0
机构:
Dalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
Dalian Univ Technol, Ningbo Inst, Ningbo 315000, Peoples R ChinaDalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China
机构:
Univ Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, Malaysia
Univ Punjab, Ctr High Energy Phys, Quid E Azam Campus, Lahore 54590, PakistanUniv Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, Malaysia
Ahmed, Rashid
Masuri, Nor Safikah
论文数: 0引用数: 0
h-index: 0
机构:
Univ Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, MalaysiaUniv Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, Malaysia
Masuri, Nor Safikah
Haq, Bakhtiar Ul
论文数: 0引用数: 0
h-index: 0
机构:
King Khalid Univ, Fac Sci, Dept Phys, Adv Funct Mat & Optoelect Lab AFMOL, POB 9004, Abha, Saudi ArabiaUniv Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, Malaysia
Haq, Bakhtiar Ul
Shaari, A.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, MalaysiaUniv Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, Malaysia
Shaari, A.
AlFaifi, S.
论文数: 0引用数: 0
h-index: 0
机构:
King Khalid Univ, Fac Sci, Dept Phys, Adv Funct Mat & Optoelect Lab AFMOL, POB 9004, Abha, Saudi ArabiaUniv Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, Malaysia
AlFaifi, S.
Butt, Faheem K.
论文数: 0引用数: 0
h-index: 0
机构:
Tech Univ Munich, ECS, Phys Dept, Garching, Germany
Univ Educ, Div Sci & Technol, Coll Rd, Lahore, PakistanUniv Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, Malaysia
Butt, Faheem K.
Muhamad, Mohamed Noor
论文数: 0引用数: 0
h-index: 0
机构:
Univ Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, MalaysiaUniv Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, Malaysia
Muhamad, Mohamed Noor
Ahmed, M.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Punjab, Ctr High Energy Phys, Quid E Azam Campus, Lahore 54590, PakistanUniv Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, Malaysia
Ahmed, M.
Tahir, Sohail Afzal
论文数: 0引用数: 0
h-index: 0
机构:
Univ Punjab, Ctr High Energy Phys, Quid E Azam Campus, Lahore 54590, PakistanUniv Teknol Malaysia, UTM, Fac Sci, Dept Phys, Skudai 81310, Johor, Malaysia