Modelling of DC characteristics of power SiC-MOSFETs in SPICE

被引：0

作者：

Bisewski, Damian ^{[1
]}

Lubicz-Krosnicka, Emilia ^{[2
,3
]}

机构：

[1] Uniwersytet Morski Gdyni, Katedra Elekt Morskiej, Ul Morska 81-87, PL-81225 Gdynia, Poland

[2] Uniwersytet Morski Gdyni, Katedra Elekt Morskiej, Gdynia, Poland

[3] Uniwersytetu Morskiego Gdyni, Wydzialu Elektrycznego, Gdynia, Poland

来源：

PRZEGLAD ELEKTROTECHNICZNY | 2023年 / 99卷 / 09期

关键词：

modelling; MOSFET; silicon carbide;

D O I：

10.15199/48.2023.09.60

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper deals with the problem of computer modelling of characteristics and parameters of power MOSFETs made of silicon carbide (SiC). An original model of the considered transistor was formulated and implemented in the PSPICE program, which is based on the Shichman-Hodges model of the silicon MOS transistor modified by the authors. In comparison to other existing MOS transistor models embedded in popular computer programs as well as models described in literature, the developed model exhibits high accuracy. Furthermore, the proposed model features a relatively simple structure, meaning that it includes only a few parameters in its analytical description. The values of these parameters can be determined based on the information in the datasheets of transistor or measurement results. of DC

引用

页码：289 / 292

页数：4

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