The application of advanced high-frequency (5 G) requires a low-profile Cu foil to reduce the high-speed signal loss due to skin effect. However, the adhesion of electroless copper film on the smooth surface of polyimides (PI) remains a challenge. Here, a two-step composite modification method, consisting of TiO2 photocatalysis and Na2S2O8 photooxidation treatment, is successfully applied to induce a high adhesion strength of electroless copper film on the smooth PI surface. To meet the requirements of the flexible electronics, the average surface roughness of the PI film is increased from 4.2 to 11.5 nm through optimizing the modification. Whereas the surface contact angle decreases from the original 76.9 degrees to 18.7 degrees and the adhesion strength between the electroless copper film and PI film is increased from 0 to 0.90 KN m(-1). Spectroscopic investigations reveal that the amide bonds on the surface PI get oxidized by radicals, while an abundant -COOH and -NH2 groups form. The high oxidation potential, strong stability of the sulfate anion radicals, as along with their increased concentration in the treatment solution are contributed to the extraordinary modification performance. Therefore, the TiO2 photocatalysis and Na2S2O8 photooxidation composite treatment is an effective and environmentally friendly method for surface modification of PI films.
机构:
Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Fundamental Res Inst, Shenzhen Inst Adv Elect Mat, Shenzhen 518055, Peoples R China
Univ Chinese Acad Sci, Shenzhen Coll Adv Technol, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Fundamental Res Inst, Shenzhen Inst Adv Elect Mat, Shenzhen 518055, Peoples R China
Zhong, Ao
Li, Jinhui
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Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Fundamental Res Inst, Shenzhen Inst Adv Elect Mat, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Fundamental Res Inst, Shenzhen Inst Adv Elect Mat, Shenzhen 518055, Peoples R China
Li, Jinhui
Zhang, Guoping
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Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Fundamental Res Inst, Shenzhen Inst Adv Elect Mat, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Fundamental Res Inst, Shenzhen Inst Adv Elect Mat, Shenzhen 518055, Peoples R China
Zhang, Guoping
Sun, Rong
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Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Fundamental Res Inst, Shenzhen Inst Adv Elect Mat, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Fundamental Res Inst, Shenzhen Inst Adv Elect Mat, Shenzhen 518055, Peoples R China
机构:
Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
Tokyo Inst Technol, Dept Elect Chem, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, JapanFudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
机构:
Korea Inst Ind Technol, Surface Technol R&D Grp, Incheon 21999, South KoreaKorea Inst Ind Technol, Surface Technol R&D Grp, Incheon 21999, South Korea
Koo, Seok-Bon
Lee, Chang-Myeon
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Korea Inst Ind Technol, Surface Technol R&D Grp, Incheon 21999, South KoreaKorea Inst Ind Technol, Surface Technol R&D Grp, Incheon 21999, South Korea
Lee, Chang-Myeon
Kwon, Sang-Jun
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Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 02792, South KoreaKorea Inst Ind Technol, Surface Technol R&D Grp, Incheon 21999, South Korea
Kwon, Sang-Jun
Jeon, Jun-Mi
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Korea Inst Ind Technol, Surface Technol R&D Grp, Incheon 21999, South KoreaKorea Inst Ind Technol, Surface Technol R&D Grp, Incheon 21999, South Korea
Jeon, Jun-Mi
Hur, Jin-young
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Korea Inst Ind Technol, Surface Technol R&D Grp, Incheon 21999, South KoreaKorea Inst Ind Technol, Surface Technol R&D Grp, Incheon 21999, South Korea
Hur, Jin-young
Lee, Hong-Kee
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Korea Inst Ind Technol, Surface Technol R&D Grp, Incheon 21999, South KoreaKorea Inst Ind Technol, Surface Technol R&D Grp, Incheon 21999, South Korea