Adsorption of 4D and 5D transition metals on antimonene for optoelectronics and spintronics applications

被引:2
|
作者
Khalid, Swera [1 ]
Majid, Abdul [1 ]
ul Rehman, Fazal [1 ]
Khan, Muhammad Isa [2 ,3 ]
Alarfaji, Saleh S. [4 ]
机构
[1] Univ Gujrat, Dept Phys, Gujrat, Pakistan
[2] Islamia Univ Bahawalpur, Inst Phys, Baghdad Ul Jadeed Campus, Bahawalpur, Pakistan
[3] Islamia Univ Bahawalpur, Dept Phys, Rahim Yar Khan Campus, Bahawalpur, Pakistan
[4] King Khalid Univ, Fac Sci, Dept Chem, POB 9004, Abha 61413, Saudi Arabia
关键词
Metallic; Magnetic; Spintronics; DENSITY-FUNCTIONAL THEORY; MAGNETIC-PROPERTIES; BUCKLED BISMUTHENE; OPTICAL-PROPERTIES; TUNABLE MAGNETISM; MONOLAYER; PHOSPHORENE; GRAPHENE; STRAIN; RANGE;
D O I
10.1016/j.jmmm.2023.170968
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For spintronic devices, the adsorption of transition metal (TM) atoms may provide two-dimensional (2D) ma-terials with enhanced electrical and magnetic characteristics. Herein, the stability, electronic, and magnetic properties of 4d (Ag, Cd) and 5d (Ir, Pt, Au, Hg) TM adsorbed mono-layer antimonene (Sb) are investigated thoroughly using first-principles calculations. We find out the stability and suitability of the material by using different parameters like relative formation energy, thermal stability, and phonon dispersion curve. The adsorption energies suggest that the most favorable position of adsorption is the hollow (H) site where the ground state energy is lowest. In the case of Ir, and Au adsorbed Sb, the metallic and magnetic behavior is observed due to the change of spin-up and down. Adsorption of Ag also reveals metallic behavior but there is symmetry in high and low spin and shows non-magnetic results. Interestingly, the spin-polarized semiconducting state appears in Cd, Pt, and Hg adsorbed Sb and shows non-magnetic semiconductor behavior. Our study reveals that the TMs adsorbed Sb can be used in potential applications like spintronics, magnetic storage devices, op-toelectronics, and Nanoelectronics applications.
引用
收藏
页数:11
相关论文
共 50 条
  • [41] Specific reactivity of 4d and 5d transition metals supported over CeO2 for ammonia oxidation
    Guo, Yitong
    Ma, Lei
    Li, Zihao
    Liu, Zhisong
    Chang, Huazhen
    Zhao, Xiaoran
    Yan, Naiqiang
    CATALYSIS SCIENCE & TECHNOLOGY, 2022, 12 (21) : 6507 - 6517
  • [42] Adsorption and Diffusion of 4d and 5d Transition Metal Adatoms on Graphene/Ru(0001) and the Implications for Cluster Nucleation
    Bradley F. Habenicht
    Dieh Teng
    Lymarie Semidey-Flecha
    David S. Sholl
    Ye Xu
    Topics in Catalysis, 2014, 57 : 69 - 79
  • [43] Adsorption and Diffusion of 4d and 5d Transition Metal Adatoms on Graphene/Ru(0001) and the Implications for Cluster Nucleation
    Habenicht, Bradley F.
    Teng, Dieh
    Semidey-Flecha, Lymarie
    Sholl, David S.
    Xu, Ye
    TOPICS IN CATALYSIS, 2014, 57 (1-4) : 69 - 79
  • [44] Substitutional 4d and 5d impurities in graphene
    Alonso-Lanza, Tomas
    Ayuela, Andres
    Aguilera-Granja, Faustino
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (31) : 21913 - 21920
  • [45] A comment on 4d and 5d BPS states
    Kachru, Shamit
    Zimet, Max
    JOURNAL OF HIGH ENERGY PHYSICS, 2020, 2020 (01)
  • [46] Dioxygen Binding to all 3d, 4d, and 5d Transition Metals from Coupled-Cluster Theory
    Moltved, Klaus A.
    Kepp, Kasper P.
    CHEMPHYSCHEM, 2020, 21 (19) : 2173 - 2186
  • [47] FERROMAGNETISM OF 4D AND 5D TRANSITION-METAL MONOLAYERS ON AG(111)
    REDINGER, J
    BLUGEL, S
    PODLOUCKY, R
    PHYSICAL REVIEW B, 1995, 51 (19): : 13852 - 13855
  • [48] INTENSITIES IN OCTAHEDRAL COMPLEXES OF 4D AND 5D TRANSITION-METAL IONS
    JORDAN, PC
    PATTERSON, HH
    DORAIN, PB
    JOURNAL OF CHEMICAL PHYSICS, 1968, 49 (09): : 3858 - +
  • [49] TOTAL ENERGY AND BAND-STRUCTURE OF THE 3D, 4D, AND 5D METALS
    SIGALAS, M
    PAPACONSTANTOPOULOS, DA
    BACALIS, NC
    PHYSICAL REVIEW B, 1992, 45 (11): : 5777 - 5783
  • [50] ELECTRONIC-STRUCTURE OF 4D AND 5D TRANSITION-METAL CLUSTERS
    SEIFERT, G
    MROSAN, E
    MULLER, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : 553 - 560