Spin-based magnetic random-access memory for high-performance computing

被引：4
|
作者：
Cai, Kaiming [1 ,2 ]
Jin, Tianli [3 ]
Lew, Wen Siang [3 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Phys, Huazhong, Peoples R China
[2] Interuniv Microelect Ctr IMEC, Leuven, Belgium
[3] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore, Singapore
来源：
NATIONAL SCIENCE REVIEW | 2024年 / 11卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Compendex;
D O I：
10.1093/nsr/nwad272
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Spin-based memory technology is now available as embedded magnetic random access memory (eMRAM) for fast, high-density and non-volatile memory products, which can significantly boost computing performance and ignite the development of new computing architectures.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
    Mishra, Rahul
    Kim, Taehwan
    Park, Jongsun
    Yang, Hyunsoo
    PHYSICAL REVIEW APPLIED, 2021, 15 (02):
  • [22] Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)
    Ando, K.
    Fujita, S.
    Ito, J.
    Yuasa, S.
    Suzuki, Y.
    Nakatani, Y.
    Miyazaki, T.
    Yoda, H.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)
  • [23] Optimization of Tungsten β-Phase Window for Spin-Orbit-Torque Magnetic Random-Access Memory
    Sethu, Kiran Kumar Vudya
    Ghosh, Sambit
    Couet, Sebastien
    Swerts, Johan
    Soree, Bart
    De Boeck, Jo
    Kar, Gouri Sankar
    Garello, Kevin
    PHYSICAL REVIEW APPLIED, 2021, 16 (06)
  • [24] RANDOM-ACCESS HOLOGRAPHIC MEMORY
    GRAMMATIN, AP
    GUSEV, VK
    DOLGOVA, EV
    ZIMOGLYADOVA, EA
    MITSAI, VN
    NOVIKOV, AA
    PANKRATOV, VM
    SOMOV, VG
    FEDOROV, VB
    YURCHIKOV, BM
    SOVIET JOURNAL OF OPTICAL TECHNOLOGY, 1988, 55 (06): : 347 - 349
  • [25] FUNDAMENTAL CRITERIA FOR THE DESIGN OF HIGH-PERFORMANCE JOSEPHSON NONDESTRUCTIVE READOUT RANDOM-ACCESS MEMORY CELLS AND EXPERIMENTAL CONFIRMATION
    HENKELS, WH
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8143 - 8168
  • [26] Array-Level Analysis of Magneto-Electric Random-Access Memory for High-Performance Embedded Applications
    Lee, Hochul
    Lee, Albert
    Ebrahimi, Farbod
    Amiri, Pedram Khalili
    Wang, Kang L.
    IEEE MAGNETICS LETTERS, 2017, 8
  • [27] Programming Techniques of Resistive Random-Access Memory Devices for Neuromorphic Computing
    Machado, Pau
    Manich, Salvador
    Gomez-Pau, Alvaro
    Rodriguez-Montanes, Rosa
    Gonzalez, Mireia Bargallo
    Campabadal, Francesca
    Arumi, Daniel
    ELECTRONICS, 2023, 12 (23)
  • [28] Magnetic random-access memory with disturb-free read
    Zeissler, Katharina
    NATURE ELECTRONICS, 2023, 6 (12) : 929 - 929
  • [29] Tutorial on magnetic tunnel junction magnetoresistive random-access memory
    Cockburn, BF
    RECORDS OF THE 2004 IEEE INTERNATIONAL WORKSHOP ON MEMORY TECHNOLOGY, DESIGN AND TESTING, 2004, : 46 - 51
  • [30] Magnetic random-access memory with disturb-free read
    Katharina Zeissler
    Nature Electronics, 2023, 6 : 929 - 929
12345