14 Gbit/s Visible Light Communications Transmission System based on InGaN/GaN Blue Light Laser Diodes

被引:0
|
作者
Wang, Xiaoqian [1 ]
Yang, Chuan [1 ]
Chen, Maoyun [1 ]
He, Hongjun [1 ]
Xia, Liang [1 ]
Shen, Chao [2 ]
机构
[1] China Mobile Res Inst, Beijing, Peoples R China
[2] Fudan Univ, Sch Informat Sci & Technol, Key Lab Informat Sci Electromagnet Waves MoE, Shanghai, Peoples R China
关键词
visible light communications; 6G; laser diode; 5G NR; sum rate;
D O I
10.1109/VTC2023-Fall60731.2023.10333754
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Visible light communications (VLC) is considered a potential key technology for 6G. However, the performance of transceiver devices of VLC determines the upper limit of system. InGaN/GaN based light-emitting diodes (LEDs) have widely been used as the transmitter. In this paper, a VLC transceiver system is designed on the basis of InGaN/GaN blue light laser diode (LD). The transmitted signals are designed based on the 5G new radio (NR) physical layer protocol. The experiment verifies the feasibility of 256 quadrature amplitude modulation (QAM) and the blue LD-based VLC system can achieve up to 14Gbit/s system sum rate when adopting 5G NR protocol, which contributes to the application of VLC in 6G systems.
引用
收藏
页数:5
相关论文
共 50 条
  • [31] GaN Laser Diode Technology for Visible-Light Communications
    Najda, Stephen P.
    Perlin, Piotr
    Suski, Tadek
    Marona, Lucja
    Leszczynski, Mike
    Wisniewski, Przemek
    Stanczyk, Szymon
    Schiavon, Dario
    Slight, Thomas
    Watson, Malcolm A.
    Gwyn, Steffan
    Kelly, Anthony E.
    Watson, Scott
    ELECTRONICS, 2022, 11 (09)
  • [32] Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
    Shen, Chao
    Ng, Tien Khee
    Lee, Changmin
    Leonard, John T.
    Nakamura, Shuji
    Speck, James S.
    Denbaars, Steven P.
    Alyamani, Ahmed Y.
    El-Desouki, Munir M.
    Ooi, Boon S.
    GALLIUM NITRIDE MATERIALS AND DEVICES XII, 2017, 10104
  • [33] GaN-Based Blue Light-Emitting Diodes with an Electron Transmission Layer
    Jheng, J. S.
    Wang, C. K.
    Chiou, Y. Z.
    Chang, S. P.
    Chang, S. J.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (10) : R154 - R157
  • [34] Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes
    Kou, Jianquan
    Shen, Chih-Chiang
    Shao, Hua
    Che, Jiamang
    Hou, Xu
    Chu, Chunshuang
    Tian, Kangkai
    Zhang, Yonghui
    Zhang, Zi-Hui
    Kuo, Hao-Chung
    OPTICS EXPRESS, 2019, 27 (12) : A643 - A653
  • [35] Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures
    Leite, JR
    MICROELECTRONICS JOURNAL, 2002, 33 (04) : 323 - 329
  • [36] Spontaneous Emission Studies for Blue and Green InGaN-Based Light-Emitting Diodes and Laser Diodes
    Choi, Dae-Choul
    Kim, Yoon Seok
    Kim, Kyoung-Bo
    Lee, Sung-Nam
    PHOTONICS, 2024, 11 (02)
  • [37] Life tests of Nichia AlGaN/InGaN/GaN blue-light-emitting diodes
    Helms, CJ
    Berg, NH
    Barton, DL
    Osinski, M
    FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS, 1996, 2683 : 74 - 80
  • [38] Life tests and failure analysis of AlGaN/InGaN/GaN blue light emitting diodes
    Barton, DL
    Osinski, M
    Helms, CJ
    Berg, NH
    Phillips, BS
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IV, 1996, 2693 : 64 - 72
  • [39] Optimal number of quantum wells for blue InGaN/GaN light-emitting diodes
    Xia, Chang Sheng
    Li, Z. M. Simon
    Li, Z. Q.
    Sheng, Yang
    Zhang, Zhi Hua
    Lu, Wei
    Cheng, Li Wen
    APPLIED PHYSICS LETTERS, 2012, 100 (26)
  • [40] Influence of in fraction on the optical properties of InGaN/GaN blue light-emitting diodes
    Cui M.
    Zhou T.
    Zhang J.
    Huang X.
    Guangxue Xuebao/Acta Optica Sinica, 2011, 31 (10): : 1016004 - 1