SiC-on-insulator based lateral power device and it' s analytical models

This paper proposes the concept of SiC-on-insulator (SiCOI) lateral power device and its analytical models. The SiCOI technology provides dielectric isolation and improves the vertical breakdown. The analytical models provide the physic insight of the surface potential and electric field distributions for both full and partial depletion cases. The optimal breakdown voltage and doping concentration are deduced to analyze the breakdown mechanism qualitatively. The specific on-resistance in the drift region was also calculated to analyze the conduction characteristics. The influences of the structure parameters on the performances of the SiCOI lateral power device are investigated by the analytical model and numerical simulation. The analytical results of the proposed model are well agreement with the numerical results, confirming the validity of the proposed unified analytical model. Both the analytical and numerical results provide the physical explanation and effective solution for optimizing the electric field and improving breakdown voltage for the SiCOI lateral power device.