Narrow-Linewidth Semiconductor Laser With High-Order Sidewall Gratings

被引：6
|
作者：
Xu, Yuanbo [1 ,2 ]
Wang, Mingjin [1 ,3 ]
Qu, Hongwei [1 ,3 ]
Liu, Wenzhen [1 ,2 ]
Fu, Ting [1 ,2 ]
Li, Jing [1 ,2 ]
Du, Fangling [1 ,2 ]
Zheng, Wanhua [1 ,3 ,4 ,5 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[4] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 101408, Peoples R China
[5] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 101408, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2023年 / 35卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Semiconductor laser; high-order sidewall gratings; narrow linewidth; DFB; WAVELENGTH; NOISE;
D O I：
10.1109/LPT.2022.3222761
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate a kind of ridge waveguide semiconductor laser with high-order sidewall gratings around 1550 nm. The ridge waveguide with 11th-order sidewall gratings is fabricated by the standard contact-types i -line lithography. The fabricated device shows an output power of 44 mW at a bias current of 500 mA and a stable single-mode operation over wide ranges of current and temperature conditions. A high side-mode suppression ratio (similar to 59 dB), a narrow linewidth of 63 kHz and a low relative intensity noise (< -150 dB/Hz under the frequency range from 0.03 to 20 GHz) have been demonstrated at 25 degrees C .
引用
收藏
页码：85 / 88
页数：4
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